Paper
24 July 2002 Negative-tone CAR resists for e-beam lithography: modification of chemical composition for R&D application (high resolution) or production application (high sensitivity)
Murielle Charpin, Laurent Pain, Serge V. Tedesco, C. Gourgon, A. Andrei, Daniel Henry, Yves LaPlanche, Ryotaro Hanawa, Tadashi Kusumoto, Masumi Suetsugu, H. Yokoyama
Author Affiliations +
Abstract
In this study, it is investigated how chemical modifications of a given resist platform can induce improvements in e-beam lithographic performances. Molecular weight (Mw) as well as photo-acid generator (PAG) modifications will act as fine tuners for Sumitomo NEB-33 negative resist to match specific applications: preparation of advanced CMOS R&D architecture (highly resolving resists needed) and fast patterning for production environment (highly sensitive resists needed).
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Murielle Charpin, Laurent Pain, Serge V. Tedesco, C. Gourgon, A. Andrei, Daniel Henry, Yves LaPlanche, Ryotaro Hanawa, Tadashi Kusumoto, Masumi Suetsugu, and H. Yokoyama "Negative-tone CAR resists for e-beam lithography: modification of chemical composition for R&D application (high resolution) or production application (high sensitivity)", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474193
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Polymers

Electron beam lithography

Etching

Lithography

Palladium

Diffusion

Industrial chemicals

Back to Top