Deep ultraviolet (DUV) light plays a critical role in many spectroscopy and imaging techniques. To advance these techniques, it is essential to develop devices that can provide substantial field enhancement within the DUV range. This presentation will introduce metasurfaces composed of various dielectric materials. Specifically, we will showcase Si metasurfaces demonstrating plasmonic modes induced by the "photon-doping effect," resulting in significant field enhancement at 266 nm. Furthermore, we will discuss DUV metasurfaces made of low-loss dielectric material HfO2, which exhibit multiple high-quality-factor quasi-bound-state-in-the-continuum resonances. Potential applications of the reported metasurfaces will be discussed.
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