We showcase plasmonic metasurfaces employing silicon (Si) nanostructures tailored for deep ultraviolet (DUV) spectroscopy. Si exhibits plasmonic resonance owing to the photon-doping effect originating from interband transitions in the DUV range. Through careful design adjustments, our metasurface achieves strong field enhancement at ~260nm. We investigate potential applications of the reported Si void metasurfaces for surface-enhanced spectroscopy by leveraging the unique properties of our Si metasurface. This study expands the range of materials employed in DUV nanophotonics, unlocking opportunities across diverse fields such as biomedical analysis and nonlinear optics.
Deep ultraviolet (DUV) light plays a critical role in many spectroscopy and imaging techniques. To advance these techniques, it is essential to develop devices that can provide substantial field enhancement within the DUV range. This presentation will introduce metasurfaces composed of various dielectric materials. Specifically, we will showcase Si metasurfaces demonstrating plasmonic modes induced by the "photon-doping effect," resulting in significant field enhancement at 266 nm. Furthermore, we will discuss DUV metasurfaces made of low-loss dielectric material HfO2, which exhibit multiple high-quality-factor quasi-bound-state-in-the-continuum resonances. Potential applications of the reported metasurfaces will be discussed.
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