Presentation
10 April 2024 Improved ArFi scanner throughput and process yield through a next generation DUV light source featuring high-repetition rate and enhanced speckle contrast
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Abstract
Considering potential negative impacts on the scanner, such as the shortened life duration of scanner optical components due to increased pulse energy, from conventional scaling, not only the increase in Repetition Rate (RR) but also reduction of effects on optical components need to be addressed. Furthermore, for improvement in EPE, apart from high RR scaling and minimizing optical component impacts, reduction in Line Width Roughness (LWR) and Line Edge Roughness (LER) caused by speckle is also put into account.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toshihiro Oga, Takamitsu Komaki, Takeshi Ohta, Shinichi Matsumoto, Katsuhiko Wakana, Kouji Kakizaki, and Takashi Saitou "Improved ArFi scanner throughput and process yield through a next generation DUV light source featuring high-repetition rate and enhanced speckle contrast", Proc. SPIE PC12953, Optical and EUV Nanolithography XXXVII, PC129530C (10 April 2024); https://doi.org/10.1117/12.3009784
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KEYWORDS
Scanners

Deep ultraviolet

Speckle

Optical components

Yield improvement

Semiconducting wafers

Semiconductors

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