Poster
10 April 2024 Analyzing line width roughness (LWR) sensitivity to resist and laser-induced speckle for enhanced PSD-based quantification
Author Affiliations +
Conference Poster
Abstract
As the proportion of LWR/CDU in the EPE budget has tightened in recent years, its reduction has become a critical issue. Among many factors, contributions of resist and speckle play a key role in LWR/CDU. The authors therefore carried out a series of experiments in which the resist compositions and the speckle were controlled in order to validate the above points. The spatial frequency of the speckle was controlled by controlling the illumination conditions of the scanner in the experiments. The experiments not only clarified the contributions of resist and speckle, but also confirmed the contribution of the interaction between resist and speckle. We were able to use PSD analysis with the results of a simplified model-based Monte Carlo simulation to explain the interaction between resist and speckle. In addition, experimental results proved that LWR/CDU reduction can be achieved by reducing speckle and optimizing resist composition.
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takamitsu Komaki, Tomohiro Iwaki, Yuichi Mukai, Kouichi Fujii, Toshihiro Kobayashi, Toshihiro Ohga, Kouji Kakizaki, Takashi Saito, Risa Yasue, Natsuki Okada, Katsunori Otsuki, Tomonori Okada, Kanji Sugino, and Takahito Kumazaki "Analyzing line width roughness (LWR) sensitivity to resist and laser-induced speckle for enhanced PSD-based quantification", Proc. SPIE PC12953, Optical and EUV Nanolithography XXXVII, PC129530S (10 April 2024); https://doi.org/10.1117/12.3008944
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KEYWORDS
Line width roughness

Speckle

Chromatic aberrations

Light sources

Lithography

Scanners

Semiconductors

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