Dr. Alexandra Krawicz Profile

Dr. Alexandra Krawicz

at TEL

SPIE Involvement:

Author

Publications (11)

Proceedings Article | 10 April 2024 Poster

Coater/developer-based patterning techniques to improve tight pitches towards high-NA EUV

Kanzo Kato, Lior Huli, Steven Grzeskowiak, Alexandra Krawicz, Eric Liu, Akiteru Ko, Satoru Shimura, Shinichiro Kawakami, Cong Dinh, Takahiro Kitano, Seiji Nagahara, Luciana Meli, Indira Seshadri, Martin Burkhardt, Karen Petrillo

Proceedings Volume PC12953, PC129530Y (2024) https://doi.org/10.1117/12.3010880

KEYWORDS: Yield improvement, Optical lithography, Extreme ultraviolet, Extreme ultraviolet lithography, Etching, Lithography, Tin, Semiconductors, Integrated circuits, Inspection

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Proceedings Article | 9 April 2024 Presentation + Paper

Advanced processes in metal-oxide resists for high-NA EUV lithography

Cong Que Dinh, Seiji Nagahara, Kayoko Cho, Hikari Tomori, Yuhei Kuwahara, Tomoya Onitsuka, Soichiro Okada, Shinichiro Kawakami, Arisa Hara, Seiji Fujimoto, Makoto Muramatsu, Reiko Tsuzuki, Xiang Liu, Arame Thiam, Yannick Feurprier, Kathleen Nafus, Michael Carcasi, Lior Huli, Kanzo Kato, Alexandra Krawicz, Michael Kocsis, Peter De Schepper, Lauren McQuade, Kazuki Kasahara, Jara Garcia Santaclara, Rik Hoefnagels, Bruno La Fontaine, Ryan Miyakawa, Chris Anderson, Patrick Naulleau

Proceedings Volume 12957, 1295705 (2024) https://doi.org/10.1117/12.3010207

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Inspection, Tin, Lithography, Etching

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One of the key steps in the pattern formation chain of extreme ultraviolet (EUV) lithography is the development process to resolve the resist pattern after EUV exposure. The traditional development process might be insufficient to achieve the requirements of ultra-high-resolution features with low defect levels. The aim of this paper is to establish a process to achieve a good roughness, a low defectivity at a low EUV dose, and capability for extremely-high-resolution for high numerical aperture (NA) and hyper-NA EUV lithography. A new development method named ESPERT™ (Enhanced Sensitivity develoPER Technology™) has been introduced to improve the performance of metal oxide-resists (MOR). ESPERT™ as a chemical super resolution technique effectively apodized the MOR chemical image, improving chemical gradient (higher exposure latitude (EL)) and reducing scums (fewer bridge defects). This new development method can also keep the resist profile vertical to mitigate the break defects. The performances of the conventional development and ESPERT™ were evaluated and compared using 0.33 NA EUV, 0.5 NA EUV, and electron beam (EB) exposures, for all line-space (LS), contact hole (CH), and pillar (PL) patterns. Using 0.33 NA EUV scanners on LS patterns, both bridge and break defects were confirmed to be reduced for all 32-nm-pitch, 28-nm-pitch, 26-nm-pitch LS patterns while reducing the EUV dose to size (DtS). In the electrical yield (1 meter length) test of breaks/bridges of 26-nm pitch structures, ESPERT™ reduced EUV dose while its combo yield was almost 100% over a wide dose range of 20mJ/cm². For CH patterns, in the case of 32-nm-pitch AEI (after etch inspection), EL was increased 7.5% up to 22.5%, while failure free latitude (FFL) was widened from 1-nm to 4-nm. A 16-nm-pitch LS pattern was successfully printed with 0.5 NA tool, while a 16-nm-pitch PL and an 18-nm-pitch CH patterns were also achieved with an EB lithography by ESPERT™. With ESPERT™, there was no pillar collapse observed for 12-nm half-pitch PL by 0.5 NA and 8-nm half-pitch PL by EB. With all the advantages of having a high exposure sensitivity, a low defectivity, and an extremely-high-resolution capability, this advanced development method is expected be a solution for high-NA EUV towards hyper-NA EUV lithography.

Proceedings Article | 28 November 2023 Presentation + Paper

Coater/developer-based patterning techniques to achieve tight pitches with 0.33 NA single exposure

Kanzo Kato, Seiji Nagahara, Lior Huli, Nathan Antonovich, David Hetzer, Steven Grzeskowiak, Alexandra Krawicz, Eric Liu, Nayoung Bae, Akiteru Ko, Satoru Shimura, Shinichiro Kawakami, Dinh Conque, Takahiro Kitano, Luciana Meli, Indira Seshadri, Martin Burkhardt, Karen Petrillo

Proceedings Volume PC12750, PC127500G (2023) https://doi.org/10.1117/12.2687901

KEYWORDS: Optical lithography, Extreme ultraviolet lithography, Lithography, Semiconductors, Integrated circuits, Industry, Fiber optic illuminators, Fabrication, Etching

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Proceedings Article | 21 November 2023 Presentation + Paper

Advanced development for contact-holes of metal-oxide resists

Cong Que Dinh, Seiji Nagahara, Kanzo Kato, Shinichiro Kawakami, Yuhei Kuwahara, Soichiro Okada, Kayoko Cho, Hikari Tomori, Junji Nakamura, Shoichi Terada, Makoto Muramatsu, Alexandra Krawicz, Kathleen McInerney, Nathan Antonovich, Lior Huli

Proceedings Volume 12750, 1275009 (2023) https://doi.org/10.1117/12.2687434

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Scanners, Photoresist processing, Metals

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One of the key steps in the pattern formation chain of extreme ultraviolet (EUV) lithography is the development process to resolve the resist pattern after EUV exposure. A simple traditional development process might be insufficient to clear the holes in contact-hole (CH) patterns and often causes missing hole defects around target-CD. In prior papers, a new development method named ESPERT™ (Enhanced Sensitivity develoPER Technology™) has been introduced to improve the performance of metal oxide-resists (MOR) for line/space (L/S) and pillar patterns. ESPERT™ as a chemical super resolution technique effectively apodized the MOR chemical image, improving chemical gradient and reducing scums. In this work, this development technique was optimised for CH patterns to reduce both the local CD uniformity (LCDU) and to reduce the levels of missing contact holes at a lower exposure dose. This is made possible thanks to the capability of the updated version of ESPERT™ that can effectively remove the scums (resist residues) inside CH to extend the missing hole defect margins. The high development contrast of the new development technique results also in a much higher exposure latitude. Using 0.33 NA EUV scanners on 36-nmpitch hexagonal patterns, the new development enhanced exposure latitude (EL), failure free latitude (FFL), and failure free dose ranges at both ADI (after development inspection) and AEI (after etch inspection) for two diverse types of MORs. For instance, in the case of the reference MOR developed by ESPERT™, CHs were nicely transferred to a TiN layer, even for small CD holes of 14.7 nm. If compared to the data by conventional development, using the new method, the EL was increased from 16.0% to 49.1%, the FFL was extended from 2 nm to 6 nm, and the failure free dose range was increased from 13.3% to 72.2%. It was also possible to have EUV dose-to-size (DtS) of 28 mJ/cm² with EL of 49.9% at ADI, using the new development. With all those advantages, this new development method is expected to be the solution for CH pattern formation of negative tone MORs in EUV lithography.

Proceedings Article | 1 May 2023 Poster + Paper

Optimization of spin-on metal oxide resist performance via new development techniques on sub-30nm pitch patterning

Lior Huli, Kanzo Kato, Steven Gueci, Nathan Antonovich, Steven Grzeskowiak, David Hetzer, Eric Liu, Alexandra Krawicz, Satoru Shimura, Shinichiro Kawakami, Soichiro Okada, Karen Petrillo, Luciana Meli, Nicholas Latham, Yasiel Cabrera, Belle Antonovich

Proceedings Volume 12498, 1249822 (2023) https://doi.org/10.1117/12.2658880

KEYWORDS: Extreme ultraviolet, Metal oxides, Line edge roughness, Extreme ultraviolet lithography, Optical lithography, Inspection, Interfaces, Etching, Plasma etching, Photoresist processing

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Proceedings Article | 30 April 2023 Presentation

Etch optimization for defect reduction of EUV photoresists

Alexandra Krawicz, Katie Lutker-Lee, Sophie Thibaut, Eric Liu, Danilo De Simone, Arnaud Dauendorffer, Yannick Feurprier, Kathleen Nafus, Philippe Bézard, Philippe Foubert, Noriaki Oikawa

Proceedings Volume PC12499, PC1249903 (2023) https://doi.org/10.1117/12.2658971

KEYWORDS: Photoresist materials, Etching, Extreme ultraviolet lithography, Printing, Bridges, Thin film coatings, Stochastic processes, Scanners, Oxides, Metals

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Proceedings Article | 30 April 2023 Presentation

Challenges and innovations in EUV patterning: lithography and etch outlook

Eric Liu, Akiteru Ko, Sophie Thibaut, Katie Lutker-Lee, Steven Grzeskowiak, Alexandra Krawicz, Christopher Cole, Hamed Hajibabaei, Sergey Voronin, Nayoung Bae, Angelique Raley, Lior Huli, Kanzo Kato, David Hetzer, Kathleen Nafus, Seiji Fujimoto, Seiji Nagahara, Satoru Shimura, Shinichiro Kawakami, Congque Dinh, Yuhei Kuwahara, Shigeru Tahara, Masanobu Honda, Tetsuya Nishizuka, Peter Biolsi, Hiromasa Mochiki

Proceedings Volume PC12499, PC124990H (2023) https://doi.org/10.1117/12.2659720

KEYWORDS: Etching, Optical lithography, Lithography, Extreme ultraviolet, Plasma etching, Plasma, Transistors, Semiconducting wafers, Photoresist processing, Photochemistry

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Proceedings Article | 11 November 2022 Presentation

Holistic litho-etch development to address patterning challenges towards high NA EUV

Seiji Nagahara, Arnaud Dauendorffer, Xiang Liu, Tomoya Onitsuka, Hisashi Genjima, Noriaki Nagamine, Yuhei Kuwahara, Yuya Kamei, Shinichiro Kawakami, Makoto Muramatsu, Satoru Shimura, Kathleen Nafus, Noriaki Oikawa, Yannick Feurprier, Marc Demand, Sophie Thibaut, Alexandra Krawicz, Steven Grzeskowiak, Katie Lutker-Lee, Eric Liu, Christopher Catano, Joshua LaRose, Jeffrey Shearer, Lior Huli, Philippe Foubert, Danilo De Simone

Proceedings Volume PC12292, PC122920N (2022) https://doi.org/10.1117/12.2642941

KEYWORDS: Extreme ultraviolet, Optical lithography, Extreme ultraviolet lithography, Etching, Plasma etching, Lithography, Yield improvement, Stochastic processes, Plasma, Photoresist materials

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Proceedings Article | 31 October 2022 Poster

Coater/developer-based techniques to improve high-resolution EUV patterning

Kanzo Kato, Lior Huli, David Hetzer, Steven Grzeskowiak, Alexandra Krawicz, Nayoung Bae, Satoru Shimura, Shinichiro Kawakami, Yuhei Kuwahara, Cong Que Dinh, Soichiro Okada, Takahiro Kitano, Seiji Nagahara, Akihiro Sonoda

Proceedings Volume PC12292, PC122920Q (2022) https://doi.org/10.1117/12.2642878

KEYWORDS: Extreme ultraviolet, Optical lithography, Lithography, Extreme ultraviolet lithography, Semiconductors, Oxides, Metals, Integrated circuits, Industrial chemicals, Etching

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Proceedings Article | 25 May 2022 Presentation + Paper

Outlook for high-NA EUV patterning: a holistic patterning approach to address upcoming challenges

Angélique Raley, Lior Huli, Steven Grzeskowiak, Katie Lutker-Lee, Alexandra Krawicz, Yannick Feurprier, Eric Liu, Kanzo Kato, Kathleen Nafus, Arnaud Dauendorffer, Nayoung Bae, Josh LaRose, Andrew Metz, Dave Hetzer, Masanobu Honda, Tetsuya Nishizuka, Akiteru Ko, Soichiro Okada, Yasuyuki Ido, Tomoya Onitsuka, Shinichiro Kawakami, Seiji Fujimoto, Satoru Shimura, Cong Que Dinh, Makoto Muramatsu, Peter Biolsi, Hiromasa Mochiki, Seiji Nagahara

Proceedings Volume 12056, 120560A (2022) https://doi.org/10.1117/12.2613063

KEYWORDS: Plasma etching, Etching, Extreme ultraviolet, Optical lithography, Plasma, Focus stacking software, Semiconducting wafers, Photoresist processing, Extreme ultraviolet lithography, Silicon carbide

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Proceedings Article | 28 September 2021 Poster + Presentation

Coater/developer and new underlayer application to sub-30nm process

Kanzo Kato, Naoki Shibata, Lior Huli, Dave Hetzer, Angélique Raley, Christopher Cole, Alexandra Krawicz, Satoru Shimura, Shinichiro Kawakami, Soichiro Okada, Takahiro Kitano, Akihiro Sonoda, Karen Petrillo, Luciana Meli, Cody Murray, Alex Hubbard

Proceedings Volume 11854, 118541D (2021) https://doi.org/10.1117/12.2602829

KEYWORDS: Optical lithography, Extreme ultraviolet, Photoresist processing, Oxides, Metals, Lithography, Integrated circuits, Extreme ultraviolet lithography, Etching

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Showing 5 of 11 publications

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