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In this report, we present the latest results regarding the defect reduction and LER improvement work regarding chemoepitaxy line & space pattern. In addition, we update the evaluation results regarding chemo-epitaxy hole pattern.
In this report, we present the latest results regarding the defect reduction and LER improvement work regarding chemoepitaxy line and space pattern. In addition, we introduce the result of application of chemical epitaxy process to hole pattern.
Tokyo Electron Limited has focused its efforts in scaling many laboratory demonstrations to 300 mm wafers. Additionally, we have recognized that the use of DSA requires specific design considerations to create robust layouts. To this end, we have discussed the development of a DSA ecosystem that will make DSA a viable technology for our industry, and we have partnered with numerous companies to aid in the development of the ecosystem. This presentation will focus on our continuing role in developing the equipment required for DSA implementation specifically discussing defectivity reduction on flows for making line-space and hole patterns, etch transfer of DSA patterns into substrates of interest, and integration of DSA processes into larger patterning schemes.
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