Dr. Anna Muscara Profile

Dr. Anna Muscara

at STMicroelectronics

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Proceedings Article | 21 June 2004 Paper

Si-based resonant cavity light-emitting devices

Maria Eloisa Castagna, Salvatore Coffa, Anna Muscara, Alessandro Costa, Sebastiano Ravesi, Simona Lorenti, Marco Camalleri

Proceedings Volume 5366, (2004) https://doi.org/10.1117/12.529135

KEYWORDS: Silicon, Optical microcavities, Reflectivity, Semiconducting wafers, Mirrors, Transmission electron microscopy, Luminescence, Light emitting diodes, Refractive index, Annealing

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We report on the fabrication and characterization of Si/SiO₂ Fabry-Perot microcavities. These structures are used to enhance the external quantum emission along the cavity axis and the spectral purity of emission from Rare earth doped and undoped SiOx (x <= 2)films that are used as active media to fabricate a Si based RCLED (Resonant Cavity Light emitting Devices). These structures are fabricated by chemical vapour deposition on a silicon substrate. The microcavities are tuned at different wavelengths: 540nm, 980nm, 1540nm, 780nm and 850nm (characteristic emission wavelength respectively for Tb, Yb and Er and Silicon Rich Oxide (SRO)). The reflectivity of the microcavities is of 97% and the factor quality ranges from 50 (for the cavity tuned at 540nm) to 95 (for the cavities tuned at 980nm and 1540nm) and 150 (for the cavity tuned at 780nm and 850 nm). These cavities have been characterized by TEM analysis to evaluate films uniformity, thickness and densification after annealing process for temperature ranging from 800° to 1100°C. The reflectivity and photoluminescence spectra show resonant wavelengths in agreement with the calculated values. A new structure to electrically pump the active media has been designed. The electrical properties of the active media have been analysed. An enhancement of the photoluminescence signal of twenty times have been achieved for the selected emission wavelength.

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