We have demonstrated silicone-incorporated organic light-emitting semiconductor (SI-OLES) enabling anisotropic micro-lithography with reactive ion etching (RIE)-coupled photolithography (RCP) process. The SI-OLES possesses high chemical–physical robustness, and particularly, can render silicone-based non-blocking etching layer during the RIE by mimicking RIE chemistry of silicon, so that precise anisotropic mciro-patterns of SI-OLES can be achieved by the RCP process. Consequently, we successfully fabricated ultrahigh-density RGB OLES anisotropic patterns (4,216 ppi corresponding to 4,938,271 patterns/cm2), as well as, full-color SI-OLES-based OLEDs (949 ppi) without degradation of their electroluminescence characteristics, by the application of three cycles of consecutive RCP processes.
Here, we present a silicone engineered anisotropic lithography of the organic light-emitting semiconductor (OLES) that in-situ forms a non-volatile etch-blocking layer during reactive ion etching. [1,2] This unique feature not only slows the etch rate but also enhances the anisotropy of etch direction, leading to gain delicate control in forming ultrahigh-density multicolor OLES patterns (up to 4,500 pixels per inch) through photolithography. This patterning strategy inspired by silicon etching chemistry is expected to provide new insights into ultrahigh-density OLEDoS (OLED on Silicon) microdisplays.
Molecularly hybridized materials composed of polymer semiconductors (PSCs) and single-walled carbon nanotubes (SWNTs) may provide a new platform to exploit an advantageous combination of semiconductors, which yields electrical properties that are not available in a single component system. In this talk, we demonstrate high-performance ink-jet printed hybrid transistors with an electrically engineered heterostructure by using specially designed PSCs and semiconducting SWNTs (sc-SWNTs) whose system achieved a high mobility of 0.23 cm2V-1s-1, no Von shift, a low off-current, and good bias-stability. We also revealed that binding energy between PSCs and sc-SWNT was strongly affected by side-chain length of PSCs, leading to the formation of homogeneous nanohybrid film. Eventually, understanding of electrostatic interactions in the heterostructure and experimental results suggest criteria for the design of nanohybrid heterostructures.
Acknowledgement. This work was supported by a grant (Code No. 2011-0031628) from the Center for Advanced Soft Electronics under the Global Frontier Research Program of the Ministry of Science, ICT and Future Planning, Korea. The authors acknowledge Prof. Kilwon Cho for collaboration on the analysis of x-ray diffraction.
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