High-efficiency, low-cost InGaP/GaAs dual-junction epitaxial liftoff (ELO) solar cells have been fabricated on full
4" GaAs substrates. These dual-junction solar cells exhibited an efficiency of 28.69% at AM1.5D, one-sun
illumination. This is the highest reported efficiency for dual-junction ELO solar cells to date. After application of
antireflection coating, the dual-junction ELO cells also exhibited fill factor >85%, open circuit voltage = 2.37 V, and
short circuit current density = 13 mA/cm2. An external quantum efficiency >85% was measured for both the GaAs
and InGaP sub-cells. An ELO dual-junction solar cell wafer typically weighs less than 1.7 g and has a total
semiconductor thickness <5 μm. Reclaim and reuse of the GaAs substrate after the ELO process has been
successfully demonstrated.
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