3D heterogeneous integration is an evolving segment in integrated circuit development and advanced packaging to drive More than Moore (MtM) chip scaling. Heterogeneous integration allows IC manufacturers to stack and integrate more silicon devices in a single package, increasing the transistor density and product performance. Product designers seek higher bandwidth, increased power, improved signal integrity, more flexible designs (mix/match different chip functions, sizes, and technology nodes), and lower overall costs. The 3D heterogeneous integration roadmap shows a decrease in the bonding bumps/pads pitch to a sub-micrometer level, enabling a higher bump I/O density. Key process development activity is occurring in the wafer-to-wafer (W2W) bonding process to reduce interconnect pitch to small values. In the W2W process, a wafer bonder is used to align and bond two whole wafers. To successfully unite these two bond surfaces with a very small pitch, tight control of the bond pad alignment is required to ensure the copper pads line up properly before being bonded, driving an increased need for overlay metrology precision and die-bonder control. The bonded wafers are subsequently cut up into stacked chips using a dicing process and then undergo testing and further packaging. Advanced processing control (APC) for W2W hybrid bonding is an important factor in fulfilling the target on-product overlay (OPO) via litho inputs, in-plane distortion (IPD), overlay (OVL) and bonder correction knobs. This work will evaluate the various aspects impacting OPO, including the pre and post-bonding error budget.
Sub-2nm On Product Overlay (OPO), scribe line width reduction, and high-order scanner correctibles are driving innovative overlay (OVL) targets. One promising new imaging-based overlay (IBO) OVL target to address such challenging trends in multiple semiconductor segments is a small pitch AIM (sAIM). sAIM is in essence an IBO target with grating (previous layer) beside grating (current layer) which could be placed in a few layouts: square, rectangular, and Mosaic. In this work, we will present the sAIM operational concept and performance including Total Measurement Uncertainty (TMU), residuals, and accuracy (ADI on-target offset vs. ACI on-device or target), which is often referred to as Non-Zero Offset (NZO).
Fourier Transform Infrared spectroscopy offers inline solutions for chemical bonding, epi thickness, and trench depth measurements. Through optical modeling of the transmission or reflectance spectra, information about the electronic structure and chemical composition may be obtained, which can be used for process control and monitoring. In this article, we demonstrate the measurement capabilities of FTIR for the hydrogen bonding in cell silicon nitride and amorphous carbon hard masks (ACHM), which are used for 3D NAND fabrication. For cell silicon nitride, deconvolution of the spectra allows differentiation between individual peaks corresponding to Si-N, Si-H, N-H, Si-O, and Si-OH bonds. This differentiation identifies wafers with varying hydrogen content and distinct processes. Similarly, for ACHM, peak areas related to sp2 C-H bonds and aromatic C=C bending reveals the hydrogen skew conditions in three wafers. Notably, a linear relationship between high broadband absorption and low C-H bonds (and aromatic C=C) peak area is observed. The measurements exhibit good repeatability across ultrathin silicon nitride and thick ACHM samples. We believe the technique can be valuable for compositional process control, considering the significance of hydrogen content in cell nitride performance and endurance, as well as the influence of hydrogen content and carbon sp2/sp3 ratio on selective etch ratios in dry etch processes involving ACHM and mechanical properties of the films.
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