Mr. Ichiro Mori Profile

Ichiro Mori

Consultant at FUJIFILM Electronic Materials Co Ltd

SPIE Involvement:

Author

Publications (37)

Proceedings Article | 18 March 2016 Paper

Paper

Advances in the detection capability on actinic blank inspection

Takeshi Yamane, Tsuyoshi Amano, Noriaki Takagi, Hidehiro Watanabe, Ichro Mori, Tomohisa Ino, Tomohiro Suzuki, Kiwamu Takehisa, Hiroki Miyai, Haruhiko Kusunose

Proceedings Volume 9776, 97761G (2016) https://doi.org/10.1117/12.2222747

KEYWORDS: Inspection, Photomasks, Extreme ultraviolet lithography, Light scattering, Multilayers, Defect detection, Extreme ultraviolet, Semiconducting wafers, Lithographic illumination, Mirrors, EUV optics, CCD cameras

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Proceedings Article | 9 July 2015 Paper

Paper

Detection capability of Actinic Blank Inspection tool

Tomohiro Suzuki, Hiroki Miyai, Kiwamu Takehisa, Haruhiko Kusunose, Hidehiro Watanabe, Ichiro Mori

Proceedings Volume 9658, 96580O (2015) https://doi.org/10.1117/12.2197309

KEYWORDS: Inspection, Mirrors, Lithographic illumination, Extreme ultraviolet, Defect detection, Photomasks, Ray tracing, Data modeling, Extreme ultraviolet lithography, High volume manufacturing

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Proceedings Article | 28 July 2014 Paper

Paper

Defect analysis on actinic blank inspection tool

Tomohiro Suzuki, Hiroki Miyai, Kiwamu Takehisa, Haruhiko Kusunose, Takeshi Yamane, Hidehiro Watanabe, Ichiro Mori

Proceedings Volume 9256, 92560O (2014) https://doi.org/10.1117/12.2069197

KEYWORDS: Inspection, Extreme ultraviolet lithography, Photomasks, Extreme ultraviolet, Image classification, Mirrors, Geometrical optics, Ray tracing, Lithography, Manufacturing

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Proceedings Article | 28 June 2013 Paper

Paper

The capability of high magnification review function for EUV actinic blank inspection tool

Hiroki Miyai, Tomohiro Suzuki, Kiwamu Takehisa, Haruhiko Kusunose, Takeshi Yamane, Tsuneo Terasawa, Hidehiro Watanabe, Ichiro Mori

Proceedings Volume 8701, 870118 (2013) https://doi.org/10.1117/12.2030712

KEYWORDS: Inspection, Mirrors, Extreme ultraviolet, Extreme ultraviolet lithography, Photomasks, Charge-coupled devices, Defect detection, Multilayers, Switches, Ions

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Proceedings Article | 1 April 2013 Paper

Paper

EUV actinic blank inspection: from prototype to production

Anna Tchikoulaeva, Hiroki Miyai, Tomohiro Suzuki, Kiwamu Takehisa, Haruhiko Kusunose, Takeshi Yamane, Tsuneo Terasawa, Hidehiro Watanabe, Soichi Inoue, Ichiro Mori

Proceedings Volume 8679, 86790I (2013) https://doi.org/10.1117/12.2011776

KEYWORDS: Inspection, Extreme ultraviolet, Photomasks, Defect inspection, Prototyping, Extreme ultraviolet lithography, Defect detection, High volume manufacturing, Metrology, Mirrors

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Proceedings Article | 30 June 2012 Paper

Paper

EUV actinic blank inspection tool with a high magnification review mode

Tomohiro Suzuki, Hiroki Miyai, Kiwamu Takehisa, Haruhiko Kusunose, Takeshi Yamane, Tsuneo Terasawa, Hidehiro Watanabe, Soichi Inoue, Ichiro Mori

Proceedings Volume 8441, 844115 (2012) https://doi.org/10.1117/12.964983

KEYWORDS: Inspection, Mirrors, Extreme ultraviolet, Switches, EUV optics, Photomasks, Charge-coupled devices, Cameras, Extreme ultraviolet lithography, Electroluminescent displays

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SPIE Journal Paper | 1 October 2011

Evaluation of extreme ultraviolet mask defect using blank inspection, patterned mask inspection, and wafer inspection

Takashi Kamo, Tsuneo Terasawa, Takeshi Yamane, Hiroyuki Shigemura, Noriaki Takagi, Tsuyoshi Amano, Kazuo Tawarayama, Mari Nozoe, Toshihiko Tanaka, Osamu Suga, Ichiro Mori

JM3, Vol. 10, Issue 04, 043006, (October 2011) https://doi.org/10.1117/12.10.1117/1.3644984

KEYWORDS: Photomasks, Inspection, Defect detection, Extreme ultraviolet, Wafer inspection, Semiconducting wafers, Defect inspection, Extreme ultraviolet lithography, Printing, Multilayers

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Proceedings Article | 8 April 2011 Paper

Paper

Manufacturability of 2x-nm devices with EUV tool

Kazuo Tawarayama, Yumi Nakajima, Suigen Kyoh, Hajime Aoyama, Kentaro Matsunaga, Shunko Magoshi, Satoshi Tanaka, Yumi Hayashi, Ichiro Mori

Proceedings Volume 7969, 79691L (2011) https://doi.org/10.1117/12.879333

KEYWORDS: Extreme ultraviolet lithography, Manufacturing, Reactive ion etching, Extreme ultraviolet, Lithography, Lithographic illumination, Semiconducting wafers, Yield improvement, Semiconductors, Photoresist processing

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Proceedings Article | 7 April 2011 Paper

Paper

CD correction for half pitch 2x-nm on extreme ultraviolet lithography

Hajime Aoyama, Yuusuke Tanaka, Kazuo Tawarayama, Yukiyasu Arisawa, Taiga Uno, Takashi Kamo, Toshihiko Tanaka, Alan Myers, Yashesh Shroff, Tetsunori Murachi, Gilroy Vandentop, Ichiro Mori

Proceedings Volume 7969, 79691J (2011) https://doi.org/10.1117/12.878672

KEYWORDS: Critical dimension metrology, Scanning electron microscopy, Extreme ultraviolet lithography, Logic, Photomasks, Optical proximity correction, Model-based design, Lithography, Point spread functions, Electronic design automation

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Proceedings Article | 29 March 2011 Paper

Paper

Evaluation of EUV mask defect using blank inspection, patterned mask inspection, and wafer inspection

Takashi Kamo, Tsuneo Terasawa, Takeshi Yamane, Hiroyuki Shigemura, Noriaki Takagi, Tsuyoshi Amano, Kazuo Tawarayama, Mari Nozoe, Toshihiko Tanaka, Osamu Suga, Ichiro Mori

Proceedings Volume 7969, 79690J (2011) https://doi.org/10.1117/12.879551

KEYWORDS: Photomasks, Inspection, Semiconducting wafers, Wafer inspection, Defect detection, Extreme ultraviolet, Printing, Scanning electron microscopy, Multilayers, Extreme ultraviolet lithography

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Proceedings Article | 29 September 2010 Paper

Paper

Printability of EUVL mask defect detected by actinic blank inspection tool and 199-nm pattern inspection tool

Takashi Kamo, Tsuneo Terasawa, Takeshi Yamane, Hiroyuki Shigemura, Noriaki Takagi, Tsuyoshi Amano, Toshihiko Tanaka, Kazuo Tawarayama, Osamu Suga, Ichiro Mori

Proceedings Volume 7823, 78231U (2010) https://doi.org/10.1117/12.864305

KEYWORDS: Photomasks, Inspection, Semiconducting wafers, Extreme ultraviolet lithography, Defect detection, Particles, Extreme ultraviolet, Scanning electron microscopy, Lithography, Printing

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Proceedings Article | 23 March 2010 Paper

Paper

Applicability of extreme ultraviolet lithography to fabrication of half pitch 35nm interconnects

Hajime Aoyama, Yuusuke Tanaka, Kazuo Tawarayama, Naofumi Nakamura, Eiichi Soda, Noriaki Oda, Yukiyasu Arisawa, Taiga Uno, Takashi Kamo, Kentaro Matsunaga, Daisuke Kawamura, Toshihiko Tanaka, Hiroyuki Tanaka, Shuichi Saito, Ichiro Mori

Proceedings Volume 7636, 76361N (2010) https://doi.org/10.1117/12.846325

KEYWORDS: Extreme ultraviolet lithography, Critical dimension metrology, Optical proximity correction, Semiconducting wafers, Photomasks, Etching, Photoresist processing, Overlay metrology, Lithography, Scanning electron microscopy

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Proceedings Article | 23 March 2010 Paper

Paper

Fabrication of 35nm via-hole patterns for interconnect test chips with EUV lithography

Yuusuke Tanaka, Hajime Aoyama, Kazuo Tawarayama, Shunko Magoshi, Daisuke Kawamura, Kentaro Matsunaga, Takashi Kamo, Yukiyasu Arisawa, Taiga Uno, Hiroyuki Tanaka, Naofumi Nakamura, Eiichi Soda, Noriaki Oda, Shuichi Saito, Ichiro Mori

Proceedings Volume 7636, 76362D (2010) https://doi.org/10.1117/12.846315

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Optical proximity correction, Metals, Extreme ultraviolet, Semiconducting wafers, Critical dimension metrology, Semiconductors, Anisotropy, Error analysis

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Proceedings Article | 23 March 2010 Paper

Paper

Process liability evaluation for beyond 22nm node using EUVL

Kazuo Tawarayama, Hajime Aoyama, Kentaro Matsunaga, Yukiyasu Arisawa, Taiga Uno, Shunko Magoshi, Suigen Kyoh, Yumi Nakajima, Ryoichi Inanami, Satoshi Tanaka, Ayumi Kobiki, Yukiko Kikuchi, Daisuke Kawamura, Kosuke Takai, Koji Murano, Yumi Hayashi, Ichiro Mori

Proceedings Volume 7636, 76361O (2010) https://doi.org/10.1117/12.846265

KEYWORDS: Extreme ultraviolet lithography, Semiconducting wafers, Manufacturing, Lithography, Etching, Extreme ultraviolet, Photoresist processing, Reactive ion etching, Silica, Metals

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Proceedings Article | 18 March 2010 Paper

Paper

Actinic phase defect detection and printability analysis for patterned EUVL mask

Tsuneo Terasawa, Takeshi Yamane, Toshihiko Tanaka, Osamu Suga, Takashi Kamo, Ichiro Mori

Proceedings Volume 7636, 763602 (2010) https://doi.org/10.1117/12.846678

KEYWORDS: Inspection, Photomasks, Defect detection, Extreme ultraviolet lithography, Extreme ultraviolet, Semiconducting wafers, Multilayers, EUV optics, Phase shifts, Bridges

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SPIE Journal Paper | 1 October 2009

Process liability evaluation for extreme ultraviolet lithography

Hajime Aoyama, Kazuo Tawarayama, Yuusuke Tanaka, Daisuke Kawamura, Yukiyasu Arisawa, Taiga Uno, Takashi Kamo, Toshihiko Tanaka, Toshiro Itani, Hiroyuki Tanaka, Yumi Nakajima, Ryoichi Inanami, Kosuke Takai, Koji Murano, Takeshi Koshiba, Kohji Hashimoto, Ichiro Mori

JM3, Vol. 8, Issue 04, 041508, (October 2009) https://doi.org/10.1117/12.10.1117/1.3238542

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Critical dimension metrology, Point spread functions, Semiconducting wafers, Lithography, Photoresist processing, Semiconductors, Projection systems, Tungsten

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Proceedings Article | 18 March 2009 Paper

Paper

Flare compensation for EUVL

Yukiyasu Arisawa, Hajime Aoyama, Taiga Uno, Toshihiko Tanaka, Ichiro Mori

Proceedings Volume 7271, 727145 (2009) https://doi.org/10.1117/12.814187

KEYWORDS: Point spread functions, Extreme ultraviolet lithography, Electronic design automation, Tolerancing, Optimization (mathematics), Lithography, Convolution, Visualization, Fractal analysis, Extreme ultraviolet

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Proceedings Article | 18 March 2009 Paper

Paper

Process liability evaluation for EUVL

Hajime Aoyama, Kazuo Tawarayama, Yuusuke Tanaka, Daisuke Kawamura, Yukiyasu Arisawa, Taiga Uno, Takashi Kamo, Toshihiko Tanaka, Toshiro Itani, Hiroyuki Tanaka, Yumi Nakajima, Ryoichi Inanami, Kosuke Takai, Koji Murano, Takeshi Koshiba, Kohji Hashimoto, Ichiro Mori

Proceedings Volume 7271, 727120 (2009) https://doi.org/10.1117/12.813484

KEYWORDS: Photomasks, Critical dimension metrology, Extreme ultraviolet lithography, Point spread functions, Semiconducting wafers, Logic, Lithography, Electronic design automation, Projection systems, Mask making

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Proceedings Article | 20 March 2008 Paper

Paper

Selete's EUV program: progress and challenges

Ichiro Mori, Osamu Suga, Hiroyuki Tanaka, Iwao Nishiyama, Tsuneo Terasawa, Hiroyuki Shigemura, Takao Taguchi, Toshihiko Tanaka, Toshiro Itani

Proceedings Volume 6921, 692102 (2008) https://doi.org/10.1117/12.772625

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Lithography, Extreme ultraviolet, Inspection, Particles, Defect inspection, Line width roughness, Contamination control, Reliability

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Selete launched a development program on EUV lithography and related mask technology in April 2006. The program is based on the concept of "lithography design and integration." It covers a wide range of areas that require further effort to get EUVL ready for volume production and was formulated on the basis that the issues should be considered from a variety of standpoints, such as acceleration of the development of key lithographic components, verification that EUVL is actually suitable for mass production, the construction of mask infrastructure, and the improvement of EUV-specific reliability and productivity. Two exposure tools have been installed as basic infrastructure: the small-field exposure tool (SFET) and the full-field exposure tool (EUV1). The objectives of the SFET installation are acceleration of the development of resist materials and processes, optimization of the mask structure and materials, and the evaluation of the exposure tool technology with regard to such things as imaging performance, stability, and the lifetimes of the optics and source components. The objective of the EUV1 installation is to demonstrate that lithography integration is a viable path to making EUV lithography a practical production technology. We found that the SFET provides both excellent resolution and high tool activity. This high performance helps us to obtain a clear understanding of the current level of EUVL performance and enables us to learn many things that can be fed back into the development program in the beta stage. A 1st static exposure with the EUV1 resolved 30-nm dense and isolated lines and 30-nm holes. The potential resolution was found to be as good as 28 nm. Although progress was made regarding EUV resist sensitivity and LWR, further progress is needed. A tool for analyzing out-gassing in EUV resists was found to facilitate the development of both resist materials and contamination control measures for exposure tools. A prototype full-field actinic inspection system for mask blanks is now under development and should become operational in the 2Q of 2008. A mask protection engineering (MPE) tool was used to show that a dual-pod carrier is very effective in protecting a mask from particles. Mask pattern defect inspection technology using a DUV wavelength of 199 nm and defect repair technology based on an FIB for EUV mask fabrication are also being developed. This work was supported in part by NEDO.

Proceedings Article | 3 May 2004 Paper

Paper

Yield-enhanced layout generation by new design for manufacturability (DfM) flow

Toshiya Kotani, Satoshi Tanaka, Shigeki Nojima, Koji Hashimoto, Soichi Inoue, Ichiro Mori

Proceedings Volume 5379, (2004) https://doi.org/10.1117/12.536254

KEYWORDS: Lithography, Optical proximity correction, Resolution enhancement technologies, Critical dimension metrology, Photomasks, Design for manufacturability, Design for manufacturing, Semiconducting wafers, Manufacturing, Computer aided design

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Proceedings Article | 28 August 2003 Paper

Paper

Impact of OPC aggressiveness on mask manufacturability

Satoshi Tanaka, Soichi Inoue, Toshiya Kotani, Kyoko Izuha, Ichiro Mori

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504253

KEYWORDS: Optical proximity correction, Photomasks, Manufacturing, Inspection, Semiconducting wafers, Vestigial sideband modulation, Lithography, Reticles, Semiconductors, Error analysis

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Proceedings Article | 28 August 2003 Paper

Paper

Photomask repeater strategy for high-quality and low-cost reticle fabrication

Suigen Kyoh, Soichi Inoue, Osamu Ikenaga, Tomotaka Higaki, Fumiaki Shigemitsu, Ichiro Mori, Haruo Kokubo, Naoya Hayashi, Nobuyuki Irie, Yuki Ishii, Toshikazu Umatate

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504178

KEYWORDS: Photomasks, Reticles, Mask making, Deep ultraviolet, Optical lithography, Semiconductors, Printing, Manufacturing, Lithography, Critical dimension metrology

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Proceedings Article | 28 August 2003 Paper

Paper

Enhanced flexible mask specifications

Shigeru Hasebe, Shigeki Nojima, Shoji Mimotogi, Satoshi Tanaka, Osamu Ikenaga, Kohji Hashimoto, Soichi Inoue, Ichiro Mori

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504268

KEYWORDS: Photomasks, Lithography, Critical dimension metrology, Manufacturing, Semiconducting wafers, Tolerancing, Solids, Semiconductors, 193nm lithography, Semiconductor manufacturing

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Proceedings Article | 16 June 2003 Paper

Paper

Maskless lithography: estimation of the number of shots for each layer in a logic device with character-projection-type low-energy electron-beam direct writing system

Ryoichi Inanami, Shunko Magoshi, Shouhei Kousai, Atsushi Ando, Tetsuro Nakasugi, Ichiro Mori, Kazuyoshi Sugihara, Akira Miura

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.483702

KEYWORDS: Back end of line, Vestigial sideband modulation, Logic devices, Metals, Data processing, Photomasks, Electron beams, Electron beam direct write lithography, Computer aided design, Beam shaping

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Proceedings Article | 16 June 2003 Paper

Paper

Maskless lithography: a low-energy electron-beam direct writing system with a common CP aperture, and recent progress

Tetsuro Nakasugi, Atsushi Ando, Ryoichi Inanami, Noriaki Sasaki, Takumi Ota, Osamu Nagano, Yuuichiro Yamazaki, Kazuyoshi Sugihara, Ichiro Mori, Motosuke Miyoshi, Katsuya Okumura, Akira Miura

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.483607

KEYWORDS: Scanning electron microscopy, Virtual colonoscopy, System on a chip, Logic devices, Maskless lithography, Lenses, Semiconducting wafers, Inspection, Electron beam direct write lithography, Lithography

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Proceedings Article | 27 December 2002 Paper

Paper

Flexible mask specifications

Shigeki Nojima, Shoji Mimotogi, Masamitsu Itoh, Osamu Ikenaga, Shigeru Hasebe, Kohji Hashimoto, Soichi Inoue, Mineo Goto, Ichiro Mori

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.469361

KEYWORDS: Photomasks, Lithography, Semiconducting wafers, Manufacturing, Tolerancing, Critical dimension metrology, Semiconductors, Solids, Error analysis, Yield improvement

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Proceedings Article | 1 August 2002 Paper

Paper

Flexible mask specifications

Shigeki Nojima, Shoji Mimotogi, Masamitsu Itoh, Osamu Ikenaga, Shigeru Hasebe, Kohji Hashimoto, Soichi Inoue, Mineo Goto, Ichiro Mori

Proceedings Volume 4754, (2002) https://doi.org/10.1117/12.477004

KEYWORDS: Photomasks, Lithography, Manufacturing, Tolerancing, Semiconducting wafers, Critical dimension metrology, Semiconductors, Solids, Error analysis, Transmittance

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Proceedings Article | 5 September 2001 Paper

Paper

Improvement of photomask repeater for 130-nm lithography

Suigen Kyoh, Soichi Inoue, Ichiro Mori, Nobuyuki Irie, Yuuki Ishii, Toshikazu Umatate, Haruo Kokubo, Naoya Hayashi

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438376

KEYWORDS: Photomasks, Critical dimension metrology, Lithography, Error analysis, Semiconducting wafers, Metals, Optical proximity correction, Printing, Inspection, Measurement devices

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Proceedings Article | 22 January 2001 Paper

Paper

Management of pattern generation system based on i-line stepper

Suigen Kyoh, Satoshi Tanaka, Soichi Inoue, Iwao Higashikawa, Ichiro Mori, Katsuya Okumura, Nobuyuki Irie, Koji Muramatsu, Yuuki Ishii, Nobutaka Magome, Toshikazu Umatate

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410728

KEYWORDS: Photomasks, Lithography, Critical dimension metrology, Semiconducting wafers, Opacity, Optical proximity correction, Optical lithography, Error analysis, Inspection, Chromium

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Proceedings Article | 22 January 2001 Paper

Paper

New concept photomask repeater with stitching exposure technique

Nobuyuki Irie, Koji Muramatsu, Yuuki Ishii, Nobutaka Magome, Toshikazu Umatate, Suigen Kyoh, Shun-Ichiro Tanaka, Soichi Inoue, Iwao Higashikawa, Ichiro Mori, Katsuya Okumura

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410713

KEYWORDS: Reticles, Photomasks, Manufacturing, Critical dimension metrology, System on a chip, Optical lithography, Terbium, Optical alignment, Semiconducting wafers, Optical proximity correction

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Proceedings Article | 19 July 2000 Paper

Paper

New-concept i-line stepper for mask fabrication

Nobuyuki Irie, Koji Muramatsu, Yuuki Ishii, Nobutaka Magome, Toshikazu Umatate, Suigen Kyoh, Satoshi Tanaka, Soichi Inoue, Iwao Higashikawa, Ichiro Mori, Katsuya Okumura

Proceedings Volume 4066, (2000) https://doi.org/10.1117/12.392077

KEYWORDS: Reticles, Photomasks, Critical dimension metrology, Manufacturing, System on a chip, Optical proximity correction, Mask making, Semiconducting wafers, Digital signal processing, Fabrication

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Proceedings Article | 19 July 2000 Paper

Paper

New photomask pattern generation method based on i-line stepper

Suigen Kyoh, Shun-Ichiro Tanaka, Soichi Inoue, Iwao Higashikawa, Ichiro Mori, Katsuya Okumura, Nobuyuki Irie, Koji Muramatsu, Yuuki Ishii, Nobutaka Magome, Toshikazu Umatate

Proceedings Volume 4066, (2000) https://doi.org/10.1117/12.392096

KEYWORDS: Photomasks, Optical proximity correction, Semiconducting wafers, Critical dimension metrology, System on a chip, Lithography, Printing, Kinematics, Scanning electron microscopy, Process engineering

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Proceedings Article | 5 July 2000 Paper

Paper

New pattern generation system based on i-line stepper: photomask repeater

Suigen Kyoh, Soichi Inoue, Iwao Higashikawa, Ichiro Mori, Katsuya Okumura, Nobuyuki Irie, Koji Muramatsu, Nobutaka Magome

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.389056

KEYWORDS: Photomasks, Critical dimension metrology, System on a chip, Semiconducting wafers, Lithography, Kinematics, Optical lithography, Printing, Optical components, Optical filters

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Proceedings Article | 25 August 1999 Paper

Paper

Inspection and printability of programmed defects on reticles for 0.200- and 0.175-um rule devices

Shinji Yamaguchi, Hideki Kanai, Haruki Komano, Hideaki Sakurai, Takehiro Kondo, Masamitsu Itoh, Ichiro Mori, Iwao Higashikawa

Proceedings Volume 3748, (1999) https://doi.org/10.1117/12.360229

KEYWORDS: Critical dimension metrology, Photomasks, Inspection, Opacity, Lithography, Scanning electron microscopy, Defect detection, Semiconducting wafers, Tolerancing, Reticles

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Proceedings Article | 26 May 1995 Paper

Paper

Automatic optical proximity correction with optimization of stepper condition

Soichi Inoue, Tadahito Fujisawa, Satoshi Tanaka, Shoji Mimotogi, Akiko Nikki, Ichiro Mori

Proceedings Volume 2440, (1995) https://doi.org/10.1117/12.209255

KEYWORDS: Optical proximity correction, Annealing, Photomasks, Optimization (mathematics), Algorithms, Phase shifting, Monte Carlo methods, Projection systems, Semiconductor manufacturing, Integrated optics

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Proceedings Article | 17 May 1994 Paper

Paper

Optimization of optical properties for single-layer halftone masks

Shinichi Ito, Hiroaki Hazama, Takashi Kamo, Hideya Miyazaki, Hiroyuki Sato, Kenji Hayashi, Fumiaki Shigemitsu, Ichiro Mori

Proceedings Volume 2197, (1994) https://doi.org/10.1117/12.175486

KEYWORDS: Photomasks, Optical properties, Transmittance, Reflection, Phase shifts, Quartz, Halftones, Refractive index, Semiconductors, Silicon

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Proceedings Article | 9 July 1992 Paper

Paper

Study of single-layer e-beam lithography for x-ray mask making

Yukiko Kikuchi, Yuji Takigami, Ichiro Mori, Yoshio Gomei

Proceedings Volume 1671, (1992) https://doi.org/10.1117/12.136010

KEYWORDS: X-ray lithography, X-rays, Scattering, Electron beam lithography, Electrons, Silicon, Mask making, Photomasks, Laser scattering, Reactive ion etching

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Showing 5 of 37 publications

Proceedings Volume Editor (1)

SPIE Conference Volume | 10 May 2007

Photomask and Next-Generation Lithography Mask Technology XIV

Conference Committee Involvement (1)

Photomask and Next Generation Lithography Mask Technology XIV

17 April 2007 | Yokohama, Japan

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