Ms. Ines A. Stolberg Profile

Ines A. Stolberg

Manager Marketing & Sales at Vistec Electron Beam GmbH

SPIE Involvement:

Conference Program Committee | Author

Websites:

Company Website

Proceedings Article | 9 April 2024 Poster + Paper

Impact of e-beam lithography and data preparation optimization on optical performance of integrated photonic waveguides

M. Greul, K. Edelmann, S. Fasold, J. Hartbaum, E. Linn, I. Stolberg, U. Weidenmueller

Proceedings Volume 12956, 129560N (2024) https://doi.org/10.1117/12.3010355

KEYWORDS: Waveguides, Electron beam lithography, Design, Integrated photonics, Fabrication, Silicon photonics, Photonics systems

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Proceedings Article | 21 November 2023 Presentation + Paper

Efficient patterning approaches for non-Manhattan layouts by using variable shaped beam systems

Ines Stolberg, Eike Linn, Ulf Weidenmueller, Matthias Slodowski

Proceedings Volume 12751, 127510K (2023) https://doi.org/10.1117/12.2688360

KEYWORDS: Electron beam lithography, Vestigial sideband modulation, Photonics, Lithography, Industrial applications, Reproducibility, Optics manufacturing, Optical gratings, Manufacturing, Geometrical optics

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SPIE Journal Paper | 12 July 2023

Efficient exposure of non-Manhattan layouts for optical applications using variable shaped beam lithography

Eike Linn, Stefan Fasold, Ines Stolberg, Ulf Weidenmueller

JM3, Vol. 22, Issue 04, 041406, (July 2023) https://doi.org/10.1117/12.10.1117/1.JMM.22.4.041406

KEYWORDS: Optical gratings, Axicons, Air contamination, Vestigial sideband modulation, Scanning electron microscopy, Design and modelling, Optical components, Edge roughness, Electron beams, Electron beam lithography

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Proceedings Article | 1 May 2023 Presentation + Paper

Efficient exposure of non-Manhattan layouts using Vistec’s shaped beam systems

E. Linn, S. Fasold, R. Galler, S. Kuefner, I. Stolberg, M. Suelzle, U. Weidenmueller

Proceedings Volume 12497, 1249704 (2023) https://doi.org/10.1117/12.2656928

KEYWORDS: Edge roughness, Optical gratings, Axicons, Electron beam lithography, Optical components, Lithography, Electron beams, Silicon photonics, Scanning electron microscopy, Electron beam direct write lithography

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Proceedings Article | 17 March 2015 Paper

Direct comparison of the performance of commonly used e-beam resists during nano-scale plasma etching of Si, SiO2, and Cr

Andy Goodyear, Monika Boettcher, Ines Stolberg, Mike Cooke

Proceedings Volume 9428, 94280V (2015) https://doi.org/10.1117/12.2085469

KEYWORDS: Etching, Silicon, Semiconducting wafers, Plasma etching, Polymethylmethacrylate, Silica, Chemistry, Chromium, Plasma, Reactive ion etching

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Proceedings Article | 21 March 2012 Paper

Optimization of MSB for future technology nodes

Hans-Joachim Doering, Thomas Elster, Matthias Klein, Joachim Heinitz, Marc Schneider, Ulf Weidenmüller, Matthias Slodowski, Ines Stolberg, Wolfgang Dorl

Proceedings Volume 8323, 83232D (2012) https://doi.org/10.1117/12.916394

KEYWORDS: Line width roughness, Stochastic processes, Monte Carlo methods, Distortion, Beam shaping, Photomasks, Optical simulations, Vestigial sideband modulation, Electronics, Error analysis

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In the ITRS roadmap [1] increasingly long mask write and cycle time is explicitly addressed as a difficult challenge in mask fabrication for the 16nm technology node and beyond. Write time reduction demands have to be seen in relation to corresponding performance parameters like Line Width Roughness (LWR), resolution, placement as well as CD Uniformity. The previously presented Multi Shaped Beam (MSB) approach [2, 3] is considered a potential solution for high throughput mask write application. In order to fully adapt the MSB concept to future industry's requirements specific optimizations are planned. The key element for achieving write time reduction is a higher probe current at the target, which can be obtained by increasing the number of beamlets as well as applying a higher current density. In the present paper the approach of a 256 beamlet MSB design will be discussed. For a given image field size along with a beamlet number increase both beamlet pitch and size have to be optimized. Out of previous investigations, one finding was that by changing the demagnification after the beam forming section of the MSB column the overall performance can be optimized. Based on first electron-optical simulations for a new final lens a larger demagnification turned out to be advantageous. Stochastic beam blur simulation results for the MSB reduction optics will be presented. During the exposure of a pattern layout the number of used beams, their shape and their distribution within the image field varies, which can lead to space charge distortion effects. In regard to this MSB simulation results obtained for an image field of approximately 10x10ìm² will be presented. For the 256 beamlet MSB design and resist sensitivities of 20μC/cm², 40μC/cm² and 100μC/cm² write time and LWR simulations have been performed. For MSB pattern data fracturing an optimized algorithm has been used, which increased the beamlet utilization factor (indicates the mean number of beamlets which are used per multi-shot). Finally an update with regard to the required changes of the data path architecture for the 256 beamlet MSB approach will be given. Data integrity as an important aspect of the production worthiness of such a systems will be discussed specifically.

Proceedings Article | 2 April 2011 Paper

Multi-shaped beam: development status and update on lithography results

Matthias Slodowski, Hans-Joachim Doering, Wolfgang Dorl, Ines Stolberg

Proceedings Volume 7970, 79700E (2011) https://doi.org/10.1117/12.879446

KEYWORDS: Beam shaping, Calibration, Lithography, Photomasks, Vestigial sideband modulation, Electronics, Prototyping, Integrated optics, Sensors, Electron beams

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Proceedings Article | 25 September 2010 Paper

Multi-shaped-beam (MSB): an evolutionary approach for high throughput e-beam lithography

Matthias Slodowski, Hans-Joachim Döring, Ines Stolberg, Wolfgang Dorl

Proceedings Volume 7823, 78231J (2010) https://doi.org/10.1117/12.868977

KEYWORDS: Beam shaping, Vestigial sideband modulation, Electron beam direct write lithography, Electron beam lithography, Semiconducting wafers, Lithography, Photomasks, Electron beams, Microelectromechanical systems, Optical lithography

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Proceedings Article | 3 April 2010 Paper

Multi-shaped beam proof of lithography

Matthias Slodowski, Hans-Joachim Doering, Wolfgang Dorl, Ines Stolberg

Proceedings Volume 7637, 763715 (2010) https://doi.org/10.1117/12.846529

KEYWORDS: Beam shaping, Vestigial sideband modulation, Lithography, Electrodes, Calibration, Mask making, Model-based design, Photomasks, Optical proximity correction, Critical dimension metrology

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Proceedings Article | 18 March 2009 Paper

Coulomb blur advantage of a multi-shaped beam lithography approach

Matthias Slodowski, Hans-Joachim Doering, Thomas Elster, Ines Stolberg

Proceedings Volume 7271, 72710Q (2009) https://doi.org/10.1117/12.814113

KEYWORDS: Beam shaping, Stochastic processes, Vestigial sideband modulation, Monte Carlo methods, Lithography, Electron beam lithography, Electron beams, Objectives, Image segmentation, Standards development

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Proceedings Article | 3 May 2007 Paper

Electron beam direct write: shaped beam overcomes resolution concerns

Ines Stolberg, Laurent Pain, Johannes Kretz, Monika Boettcher, Hans-Joachim Doering, Juergen Gramss, Peter Hahmann

Proceedings Volume 6533, 65330J (2007) https://doi.org/10.1117/12.736974

KEYWORDS: Electron beam direct write lithography, Electron beams, Vestigial sideband modulation, Semiconductors, Prototyping, Manufacturing, Photomasks, Beam shaping, Electron beam lithography, Lithography

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Showing 5 of 11 publications

Conference Committee Involvement (19)

Novel Patterning Technologies 2025

23 February 2025 | San Jose, California, United States

Novel Patterning Technologies 2024

26 February 2024 | San Jose, California, United States

38th European Mask and Lithography Conference

19 June 2023 | Dresden, Germany

Novel Patterning Technologies 2023

27 February 2023 | San Jose, California, United States

Novel Patterning Technologies 2022

25 April 2022 | San Jose, California, United States

Novel Patterning Technologies 2021

22 February 2021 | Online Only, California, United States

Novel Patterning Technologies for Semiconductors, MEMS/NEMS and MOEMS 2020

24 February 2020 | San Jose, California, United States

35th European Mask and Lithography Conference (EMLC 2019)

17 June 2019 | Dresden, Germany

Novel Patterning Technologies for Semiconductors, MEMS/NEMS and MOEMS 2019

25 February 2019 | San Jose, California, United States

34th European Mask and Lithography Conference

18 June 2018 | Grenoble, France

Novel Patterning Technologies 2018

26 February 2018 | San Jose, California, United States

33rd European Mask and Lithography Conference

26 June 2017 | Dresden, Germany

Emerging Patterning Technologies 2017

27 February 2017 | San Jose, California, United States

Alternative Lithographic Technologies VIII

22 February 2016 | San Jose, California, United States

Alternative Lithographic Technologies VII

23 February 2015 | San Jose, California, United States

Alternative Lithographic Technologies VI

24 February 2014 | San Jose, California, United States

Alternative Lithographic Technologies V

25 February 2013 | San Jose, California, United States

Alternative Lithographic Technologies IV

13 February 2012 | San Jose, California, United States

Alternative Lithographic Technologies III

1 March 2011 | San Jose, California, United States

Showing 5 of 19 Conference Committees

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