We have fabricated and characterized a narrow ridge waveguide InGaSb/AlGaAsSb type-I separate-confinementheterostructure (SCH) multi-quantum-well (MQW) laser diode emitting near 2.0μm. The broadened vertical waveguide laser structure is grown by the solid-state molecular beam epitaxy. The 4.5μm lateral ridge waveguide results in a single transverse mode operation of the laser with an injunction current below 200mA at a heat sink temperature of 293K. This laser diode provides a room temperature continuous-wave output power of 40mW at a driving current of 200mA with a 1mm cavity length and 97/5% high-reflection/anti-reflection coatings, mounted epi-side down. The far-field beam intensity distribution on the fast and slow axis of the laser diode demonstrates a TE00 fundamental transverse mode laser beam with the fast and slow axis beam divergence of 58°*23° full width at half maximum (FWHM). The diode lasers operating on fundamental spatial mode are efficiently coupling into optical fibers or collimating for free-space applications. The midinfrared region single transverse mode GaSb-based laser is hence an ideal light source for spectroscopic sensing and diodepumping pumping fiber amplifiers and solid-state lasers systems.
An experimental investigation for the polarization analysis of the high power GaSb-based semiconductor laser diodes emitting at 2.1μm in terms of measuring Stokes parameters has been exploited and adopted, which gives further insight into understanding, manipulating and applying the polarization properties of the laser diode. Results of output performance and polarization behavior of the laser are presented in the paper. The average linear polarization of the laser diode reaches 97.72% with output power exceeding 1W at 3.5A under CW operation at 20℃, which demonstrates the dominant position of linear polarization light of the output beam. Highly linear-polarized properties could not only enhance the performance of high power GaSb-based laser diodes in traditional applications in laser processing and beam combing, but also open new application fields such as parametric convention and coherent detection.
We report on successful fabrication of GaSb-based type-I quantum well distributed Bragg reflector (DBR) lasers emitting around 2.3μm. Second-order Bragg gratings of chromium were patterned by electron beam lithography. For 1.5-mm-long laser diode, single mode continuous-wave operation with output power of 10mW is obtained. The devices show a stable single mode operation with high side mode suppression ratio.
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