An innovative metrology technique has been devised to address current limitations of optical critical dimension (OCD) in advanced semiconductor metrology. This technique is based on multiple self-interferometric pupil imaging, called Mueller matrix self-interferometric pupil ellipsometry (M-SIPE). The system integrates an innovatively designed interference generator in both illuminating and imaging optics, allowing for the massive acquisition of full polarization information across entire angles around the device. The vast amount of information can offer fully comprehensive structural analysis, accomplishing enhanced sensitivity and the ability to break the well-known parameter correlation issues. The system employs a single-shot holographic measurement technique on the pupil plane, enabling rapid acquisition of three-dimensional spectral information, such as wavelengths, incidence angles, and azimuth angles. Thus, unlike conventional OCD tools, M-SIPE can obtain multi-angular and full polarization information without any mechanical movements. We verified the performance of M-SIPE by the experiment of non-patterned wafers of various conditions using an optical testbed. Our results confirmed good agreement between the experiment and theoretical simulations across all angular ranges. Furthermore, the actual device simulation was conducted to show sensitivity enhancement and ability for breaking the parameter correlation issues. The results confirmed that the large amount of angular information from M-SIPE technique could overcome current metrological challenges.
We present advanced application of novel ellipsometry technique, referred to as self-interference pupil ellipsometry (SIPE), integrating self-interference and pupil microscopy to overcome the sensitivity limitations raised from the conventional spectroscopic ellipsometry. We investigated various samples including a SiO2 monolayer, grating patterned wafers, and DRAM wafers to demonstrate outstanding capability of SIPE for metrology. The angular range corresponds to approximately 5,000 acquisition of conventional ellipsometry tools with 2º angular step scanning. From the experimental results and simulation, we expect the sensitivity of SIPE for structure metrology is at least 0.15 nm at a single wavelength and even better for multispectral measurements.
A recently introduced novel concept ellipsometry, characterized by its unique derivation process of directly extracting the polarization information from the hologram image on pupil plane, has been evaluated experimentally targeting for the application to OCD and overlay tools. With an improvement of splitting the hologram on the pupil, this self-interferometric pupil ellipsometry (SIPE) has gained the capability of measuring all of Stokes parameters (S0-S3) throughout the incident angle of 0 to 72 degrees with omnidirectional orientation. A prototype system incorporating SIPE technology has been fabricated to conduct the performance test with patterned test samples for overlay and CD evaluation, the result of which exhibits the sufficient sensitivity to dimension variation and superior repeatability for practical use. The measurement of thousands of ellipsometric data on pupil only takes tens of milliseconds at the most, realized by leveraging the advantages of self-interferometry that does not have any rotating elements in optics. The experimental result demonstrates the consistency with the simulation results based on TEM data within entire pupil. In the front-line of advanced semiconductor manufacturing, the main obstacles to OCD application, low sensitivity and parameter coupling, have been evaluated, which indicates good prospects with SIPE technology.
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