The performance of the photodetector is often the primary limiting factor affecting a free space communication or LiDAR system's sensitivity. Avalanche photodiodes (APDs) can be used to improve the signal to noise ratio (SNR) compared to conventional p-i-n photodiodes. Our study focuses on demonstrating an APD operating in the eye-safe short-wave infrared (SWIR) spectrum (>1400 nm) with high multiplication (M>1200) and low excess noise (F<7 at M=200) at room temperature. This device utilizes GaAsSb and Al0.85Ga0.15AsSb in a separate absorber, charge, and multiplication (SACM) configuration on an InP substrate. Notably, this device exhibits more than 40 times improvement in maximum achievable multiplication and 6.5 times lower excess noise at M=25 compared to commercially available InGaAs/InP devices.
Avalanche photodiodes (APDs) are used in high-speed data communication and light detection and ranging (LIDAR) systems due to their high sensitivity and high speed. However, InAlAs and InP based APDs have relatively high excess noise because they have relatively similar electron and hole ionization coefficients (α and β respectively). Here, we report on an ultra-low excess noise material Al0.85Ga0.15As0.56Sb0.44 (hereafter AlGaAsSb) with a k value (β/α) of 0.01. The excess noise and multiplication measurements were performed on both random alloy (RA) p+-i-n+ and digital alloy (DA) grown p+-i-n+ diodes with depletion regions of 1020nm and 890nm respectively. The excess noise was found to be broadly similar in both RA and DA grown structures.
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