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Moritz Brendel
at Ferdinand-Braun-Institut
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Author
Publications (2)
Proceedings Article | 16 February 2017 Presentation + Paper
AlGaN-based metal-semiconductor-metal photodetectors with high external quantum efficiency at low operating voltage
M. Brendel, F. Brunner, A. Knigge, M. Weyers
Proceedings Volume 10104, 101040J (2017) https://doi.org/10.1117/12.2250742
KEYWORDS: Indium gallium aluminium nitride, Piezoelectric effects, Back illuminated sensors, Semiconductor optoelectronics, External quantum efficiency, Electrodes, Photodetectors, Ultraviolet radiation, Interfaces, Metals, Sensors, Aluminum, Palladium, Electroluminescence, Gallium, Aluminum nitride, Gallium nitride
Proceedings Article | 28 February 2012 Paper
Polarization of eigenmodes and the effect on the anisotropic gain in laser structures on nonpolar and semipolar GaN
Jens Rass, Tim Wernicke, Simon Ploch, Moritz Brendel, Andreas Kruse, Andreas Hangleiter, Wolfgang Scheibenzuber, Ulrich Schwarz, Markus Weyers, Michael Kneissl
Proceedings Volume 8262, 826218 (2012) https://doi.org/10.1117/12.907865
KEYWORDS: Polarization, Crystals, Resonators, Laser resonators, Laser damage threshold, Quantum wells, Gallium nitride, Waveguides, Indium, Semiconductor lasers
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