Motonubu Takeya
at Sony Shiroishi Semiconductor Inc
SPIE Involvement:
Author
Publications (5)

Proceedings Article | 1 April 2005 Paper
Motonubu Takeya, Toshihiro Hashizu, Masao Ikeda
Proceedings Volume 5738, (2005) https://doi.org/10.1117/12.597099
KEYWORDS: Gallium nitride, Epitaxial lateral overgrowth, Diffusion, High power lasers, Semiconductor lasers, Sapphire, Pulsed laser operation, Continuous wave operation, Semiconducting wafers

Proceedings Article | 11 May 2004 Paper
Takeharu Asano, Motonubu Takeya, Takashi Mizuno, Shinro Ikeda, Yoshio Ohfuji, Tsuyoshi Fujimoto, Kenji Oikawa, Shu Goto, Toshihiro Hashizu, Keigo Aga, Masao Ikeda
Proceedings Volume 5365, (2004) https://doi.org/10.1117/12.533187
KEYWORDS: Continuous wave operation, Gallium nitride, Semiconductor lasers, Reliability, Pulsed laser operation, Silicon, Sapphire, Temperature metrology, Semiconducting wafers

Proceedings Article | 3 July 2003 Paper
Motonubu Takeya, Shinroh Ikeda, Tomomi Sasaki, Tsuyoshi Fujimoto, Yoshio Ohfuji, Takashi Mizuno, Kenji Oikawa, Yoshifumi Yabuki, Shiro Uchida, Masao Ikeda
Proceedings Volume 4995, (2003) https://doi.org/10.1117/12.479758
KEYWORDS: Continuous wave operation, Semiconductor lasers, Aluminum, High power lasers, Semiconducting wafers, Absorption, Reliability, Internal quantum efficiency, Semiconductors, Metalorganic chemical vapor deposition

Proceedings Article | 22 May 2002 Paper
Shiro Uchida, Satoru Kijima, Shinichi Ansai, Tsuyoshi Tojyo, Katsuyoshi Shibuya, Shinroh Ikeda, Takashi Mizuno, Motonubu Takeya, Syu Goto, Takeharu Asano, Masao Ikeda
Proceedings Volume 4651, (2002) https://doi.org/10.1117/12.467960
KEYWORDS: Laser development, Semiconductor lasers, High power lasers, Reliability, Temperature metrology, Laser applications, Cladding, Pulsed laser operation, Laser damage threshold, Aluminium gallium indium phosphide

Proceedings Article | 18 April 2000 Paper
Shiro Uchida, Satoru Kijima, Tsuyoshi Tojyo, Shinichi Ansai, Motonubu Takeya, Tomonori Hino, Katsuyoshi Shibuya, Shinroh Ikeda, Takeharu Asano, Katsunori Yanashima, Shigeki Hashimoto, Tsunenori Asatsuma, Masafumi Ozawa, Toshimasa Kobayashi, Yoshifumi Yabuki, Tsuneyoshi Aoki, Masao Ikeda
Proceedings Volume 3947, (2000) https://doi.org/10.1117/12.382094
KEYWORDS: Semiconductor lasers, Continuous wave operation, Gallium nitride, Cladding, Reactive ion etching, Epitaxy, Superlattices, Etching, Sapphire, Metals

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