400-nm-band GaN-based blue-violet laser diodes (LDs) operating with a high output power of over 100 mW have been successfully fabricated. A new ridge structure, in which the outside of the ridge was covered with a stacked layer of Si on SiO2 and the ridge width was as narrow as 1.4 μm, was applied to realize the stable lateral-mode
operation. A layer structure around the active layer was carefully designed so as to ensure a high COD level. The lasers have been operated stably for more than 500 h under 130-mW pulsed operation at 60°C. From ambient temperature dependence of the device lifetime, the empirical activation energy was estimated as 0.32 eV. These
results indicate that this LD is suitable for next-generation Blu-ray Disc system.
We have successfully developed GaInN-based 400nm lasers for DVR-blue systems and GaInP-based 650nm lasers for DVD+/- RW systems. The high-performance blue-violet laser developed here has low relative intensity noise (RIN) of -128 dB/Hz, low aspect ratio of 2.3, and a nominal lifetime of 15000 h at 60 degree(s)C and 30 mW output power. The 650nm red laser was developed for DVD+/- RW systems, which require red lasers with output power exceeding 90 mW in order to increase the data transfer speed. The high-power red lasers developed here are capable of 90 to 120 mW output power with high reliability at 60 to 70 degree(s)C and have a low aspect ratio of 2.3.
The longer lifetime is desired for high power AlGaInN based violet lasers. We found that lifetime is strongly dependent on both the initial operating consumption power and the dislocation densities in the laser stripe. Pd/Pt/Au as a metal and AlGaN/GaN superlattice as a p-type cladding layer were incorporated to reduce the operating voltage. The optimization of device parameters as well as the stripe width and the RIE etching device depth led to the lower threshold current of 3.4 kA/cm2. We used the Pendeo epitaxy technique to get lower dislocation density approximately 107 cm-2. The LDs with these technologies showed an output power as high as 35 mW under room temperature CW condition without kink. The lifetime is more than 500 hours under CW operation with a constant power of 20 mW at 25 degree(s)C.
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