The paradigm switch to a reflective mask design for EUV lithography has proven to be challenging. Within the Horizon2020 PIn3S program Zeiss and imec are collaborating to address some of these challenges. In this work, an EUV mask with a collection of programmed defects representative for the 3nm technology node was reviewed. Defect printability at wafer level was analyzed after exposure on the ASML NXE:3400B by SEM. Furthermore, the mask was analyzed on the Zeiss AIMS® EUV platform and by SEM. For P36 (1x) 1:1 L/S programmed extrusions we have demonstrated that AIMS® EUV can be used to predict ADI local defect widths as well as (μ)bridge printability. Moreover, from P36 to P32 the mask spec regarding allowed opaque L/S extrusion widths needs to be tighter considering an earlier onset of ADI (μ)bridge printability and a stronger than expected ADI defect width increase through pitch.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.