R. Prachachet, B. Samransuksamer, M. Horprathum, P. Eiamchai, S. Limwichean, C. Chananonnawathorn, T. Lertvanithphol, P. Muthitamongkol, S. Boonruang, P. Buranasiri
Omnidirectional anti-reflection coating nanostructure film have attracted enormous attention for the developments of the optical coating, lenses, light emitting diode, display and photovoltaic. However, fabricated of the omnidirectional antireflection nanostructure film on glass substrate in large area was a challenge topic. In the past two decades, the invention of glancing angle deposition technique as a growth of well-controlled two and three-dimensional morphologies has gained significant attention because of it is simple, fast, cost-effective and high mass production capability. In this present work, the omnidirectional anti-reflection nanostructure coating namely silicon dioxide (SiO2) nanorods has been investigated for optimized high transparent layer at all light incident angle. The SiO2 nanorod films of an optimally low refractive index have been fabricated by electron beam evaporation with the glancing angle deposition technique. The morphological of the prepared sampled were characterized by field-emission scanning electron microscope (FE-SEM) and high-resolution transmission electron microscope (HRTEM). The optical transmission and omnidirectional property of the SiO2 nanorod films were investigated by UV-Vis-NIR spectrophotometer. The measurement were performed at normal incident angle and a full spectral range of 200 – 2000 nm. The angle dependent transmission measure were investigated by rotating the specimen, with incidence angle defined relative to the surface normal of the prepared samples. The morphological characterization results showed that when the glancing angle deposition technique was applied, the vertically align SiO2 nanorods with partially isolated columnar structure can be constructed due to the enhanced shadowing and limited addtom diffusion effect. The average transmission of the vertically align SiO2 nanorods were higher than the glass substrate reference sample over the visible wavelength range at all incident angle due to the transition in the refractive index profile from air to the nanostructure layer that improved the anti-reflection characteristics.
R. Prachachet, B. Samransuksamer, M. Horprathum, P. Eiamchai, S. Limwichean, C. Chananonnawathorn, T. Lertvanithphol, P. Muthitamongkol, S. Boonruang, P. Buranasiri
Fabricated omnidirectional anti-reflection nanostructure films as a one of the promising alternative solar cell applications have attracted enormous scientific and industrial research benefits to their broadband, effective over a wide range of incident angles, lithography-free and high-throughput process. Recently, the nanostructure SiO2 film was the most inclusive study on anti-reflection with omnidirectional and broadband characteristics. In this work, the three-dimensional silicon dioxide (SiO2) nanostructured thin film with different morphologies including vertical align, slant, spiral and thin films were fabricated by electron beam evaporation with glancing angle deposition (GLAD) on the glass slide and silicon wafer substrate. The morphological of the prepared samples were characterized by field-emission scanning electron microscope (FE-SEM) and high-resolution transmission electron microscope (HRTEM). The transmission, omnidirectional and birefringence property of the nanostructure SiO2 films were investigated by UV-Vis-NIR spectrophotometer and variable angle spectroscopic ellipsometer (VASE). The spectrophotometer measurement was performed at normal incident angle and a full spectral range of 200 – 2000 nm. The angle dependent transmission measurements were investigated by rotating the specimen, with incidence angle defined relative to the surface normal of the prepared samples. This study demonstrates that the obtained SiO2 nanostructure film coated on glass slide substrate exhibits a higher transmission was 93% at normal incident angle. In addition, transmission measurement in visible wavelength and wide incident angles -80 to 80 were increased in comparison with the SiO2 thin film and glass slide substrate due to the transition in the refractive index profile from air to the nanostructure layer that improve the antireflection characteristics. The results clearly showed the enhanced omnidirectional and broadband characteristic of the three dimensional SiO2 nanostructure film coating.
In this paper, an ormocomp polymer nanowire with possible use in integrated-optics sensing applications is presented. We discuss the structure design, the fabrication process and present results of the simulation and characterization of the optical field profile. Since the nanowires are designed and intended to be used as integrated optics devices, they are attached to tapered and feed waveguides at their ends. The fabrication process in this work is based mainly on the nanoimprint technique. The method assumes a silicon nanowire as an original pattern, and polydimethylsiloxane (PDMS) as thesoft mold. The PDMS mold is directly imprinted on the ormocomp layer and then cured by UV light to form the polymer based nanowire. The ormocomp nanowires are fabricated to have various dimensions of width and length at a fixed 500nm thickness. The length of the nanowires is varied from 250 µm to 2 mm, whereas the width of the structures is varied between 500nm and 1µm. The possible optical mode field profile that occurs in the proposed polymer nanowire design is studied using the H-field finite element method (FEM). In the characterization part, the optical field profile and the intensity at the device output are the main focus of this paper. The various lengths of the nanowires show different characteristics in term of output intensity. An image processing is used to process the image to obtain the intensity of the output signal. A comparison of the optical field and output intensity for each polymer nanowire is also discussed.
Solar concentrators using wedge prism with diffractive grating or sawtooth profile mirror are
proposed and studied. The concentrator length-to-thickness ratio can exceed 7 and the maximum
concentration ratios exceed 3.5 for these designs.
Conference Committee Involvement (1)
International Conference on Photonics Solutions 2015
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