In this paper, we study the feasibility of using a new system to set up offline critical dimension scanning electron
microscope (CDSEM) recipes for both litho and etch processes monitoring in a foundry environment before first silicon.
We will automatically create CDSEM measurement recipes based on CAD design data (2) and litho illumination
information. The main advantages of having recipes setup done through this method as compared to performing recipe
creation on the CDSEM tool itself are the reduction in CD-SEM tool usage and more importantly, the availability of the
recipes before the first wafer is being processed in lithography resulting in a faster of cycle time for new devices.
To facilitate our objective, a new feature was implemented in the design to provide a universal global alignment (GA)
feature under both optical and SEM view. The global alignment serves two functions: to minimize device-to-device and
layer-to-layer optical variation. It synchronizes design (CAD) and wafer coordinate systems. With this universal
alignment feature available across all production layers of interest, we can fully automate recipe creation process from
design to production.
The use of dual-damascene (DD) technique for integration of Cu with low-k dielectric films has introduced new issues and challenges for the plasma etching processes. The two big challenges are: precise critical dimension (CD) control and good etch rate control over trench formation. Many details of the trench etch, such as Trench Depth, bottom rounding and sidewall smoothness have an effect on the device performance. One of the most important trench etch parameters is the trench depth. Proper control of the etch process to obtain the desired trench depth will directly impact the RC delay of the integrated circuit.
There are several methods used in measuring trench depth and analyzing the trench profile. The most direct method will be to perform a cross-sectional analysis but this process is destructive. Other non-destructive conventional methods require physical contact with the wafer during measurement. For example: atomic force microscopy, high resolution profiler, etc.
In this paper, we study the feasibility of using Applied Materials (AMAT) VeritySEM's 3D capabilities to characterize the trench depth and profiles without physically contacting the wafer. The main advantage of using a CDSEM tool to perform profile analysis is the productivity factor. This analysis can take place while also performing traditional CD measurement. This will eliminate the amount of queue time required on a conventional tool for profile measurement. As a result, an "in-situ" robust profile measurement recipe with good repeatability will improve the efficiency of the fab operations. In addition this approach is nondestructive and does not need any physical contact to the wafer.
As Integrated Circuit (IC) manufacturing moves towards smaller design rules and shorter product life cycles, the automatic application of Scanning Electron Microscopy (SEM) becomes more critical in advanced wafer fabrication processes. In most of the advanced IC manufacturers, automatic SEM defect review has been integrated into the IC fabrication process flow. Hence, a review methodology that can provide faster, accurate and reliable information on the yield limiting defects in an automated way, will definitely reduce the time to root cause analysis and thus improve yield and fab productivity. This paper provides a study of how the fab productivity was improved through the implementation of 45°-tilt Automatic Defect Re-detection (ADR) using the in-line defect review Applied Materials SEMVision. In addition to automatic review benefits, using the 45°-tilt capability also provides extra information necessary for root-cause analysis and yield improvement.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.