Dr. Tal Marciano Profile

Dr. Tal Marciano

at KLA Israel

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Publications (4)

Proceedings Article | 26 March 2019 Paper

Improved accuracy and robustness for advanced DRAM with tunable multi-wavelength imaging and scatterometry overlay metrology

Honggoo Lee, Sangjun Han, Minhyung Hong, Jieun Lee, Dongyoung Lee, Ahlin Choi, Chanha Park, Dohwa Lee, Seongjae Lee, Jungtae Lee, Jeongpyo Lee, DongSub Choi, Sanghuck Jeon, Zephyr Liu, Hao Mei, Tal Marciano, Eitan Hajaj, Lilach Saltoun, Dana Klein, Eran Amit, Anna Golotsvan, Wayne Zhou, Eitan Herzel, Roie Volkovich, John Robinson

Proceedings Volume 10959, 109591E (2019) https://doi.org/10.1117/12.2515015

KEYWORDS: Overlay metrology, Semiconducting wafers, Metrology, Scatterometry, Wafer-level optics, Manufacturing, Quality measurement, Imaging systems, Scanning electron microscopy, Diffractive optical elements

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Overlay process control is a critical aspect of integrated circuit manufacturing. Advanced DRAM manufacturing overlay error budget approaches the sub-2nm threshold, including all sources of overlay error: litho processing, non-litho processing, metrology error, etc. Overlay measurement quality, both for accuracy and robustness, depends on the metrology system and its recipe setup. The optimal configuration depends on the layer and materials involved. Increased flexibility of metrology setup is of paramount importance, paired with improved methods of recipe optimization.

Both optical image-based overlay (IBO) and scatterometry diffraction overlay (SCOL®) are necessary tools for overlay control. For some devices and layers IBO provides the best accuracy and robustness, while on others SCOL provides optimum metrology. Historically, wavelength selection was limited to discrete wavelengths and at only a single wavelength. At advanced nodes IBO and SCOL require wavelength tunability and multiple wavelengths to optimize accuracy and robustness, as well as options for polarization and numerical aperture (NA). In previous studies^1,2,3 we investigated wavelength tunability analysis with landscape analysis, using analytic techniques to determine the optimal setup. In this report we show advancements in the landscape analysis technique for IBO through both focus and wavelength, and comparisons to SCOL. A key advantage of imaging is the ability to optimize wavelength on a per-layer basis. This can be a benefit for EUV layers in combination with those of 193i, for example, as well as other applications such as thick 3D NAND layers. The goal is to make accurate and robust overlay metrology that is immune from process stack variations, and to provide metrics that indicate the quality of metrology performance. Through both simulation and on-wafer advanced DRAM measurements, we show quantitative benefits of accuracy and robustness to process stack variability for IBO and SCOL applications.

Methodologies described in this work can be achieved using Archer™ overlay metrology systems, ATL™ overlay metrology systems, and 5D Analyzer® advanced data analysis and patterning control solution.

Proceedings Article | 13 March 2018 Paper

Accuracy optimization with wavelength tunability in overlay imaging technology

Honggoo Lee, Yoonshik Kang, Sangjoon Han, Kyuchan Shim, Minhyung Hong, Seungyoung Kim, Jieun Lee, Dongyoung Lee, Eungryong Oh, Ahlin Choi, Youngsik Kim, Tal Marciano, Dana Klein, Eitan Hajaj, Sharon Aharon , Guy Ben-Dov , Saltoun Lilach, Dan Serero, Anna Golotsvan

Proceedings Volume 10585, 1058532 (2018) https://doi.org/10.1117/12.2300153

KEYWORDS: Overlay metrology, Semiconducting wafers, Diffraction, Light sources, Imaging technologies, Integrated circuits, Visible radiation, Optical testing, Electromagnetism, Signal processing

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Proceedings Article | 24 March 2016 Paper

Accuracy in optical overlay metrology

Barak Bringoltz, Tal Marciano, Tal Yaziv, Yaron DeLeeuw, Dana Klein, Yoel Feler, Ido Adam, Evgeni Gurevich, Noga Sella, Ze'ev Lindenfeld, Tom Leviant, Lilach Saltoun, Eltsafon Ashwal, Dror Alumot, Yuval Lamhot, Xindong Gao, James Manka, Bryan Chen, Mark Wagner

Proceedings Volume 9778, 97781H (2016) https://doi.org/10.1117/12.2219176

KEYWORDS: Overlay metrology, Scatterometry, Process control, Optical metrology, Metrology, Image processing, Optics manufacturing, Semiconductor manufacturing, Semiconductors, Manufacturing, Accuracy assessment, Optical alignment, Signal processing, Semiconducting wafers, Diffraction, Neodymium, Physics

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Proceedings Article | 24 March 2016 Paper

Root cause analysis of overlay metrology excursions with scatterometry overlay technology (SCOL)

Karsten Gutjahr, Dongsuk Park, Yue Zhou, Winston Cho, Ki Cheol Ahn, Patrick Snow, Richard McGowan, Tal Marciano, Vidya Ramanathan, Pedro Herrera, Tal Itzkovich, Janay Camp, Michael Adel

Proceedings Volume 9778, 97781M (2016) https://doi.org/10.1117/12.2219668

KEYWORDS: Overlay metrology, Semiconducting wafers, Scatterometry, Diffractive optical elements, Metrology, Photovoltaics, Etching, Detection and tracking algorithms, Signal processing, Optical properties

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