High power semiconductor lasers with wavelengths in the eye-safer region have application to a variety of defense,
medical and industrial applications. We report on the reliability of high power multimode and single mode InGaAsP/InP
diode lasers with wavelengths in the range 1320 to 1550 nm in a variety of configurations, including single-chip,
conduction-cooled arrays, arrays incorporating internal diffraction gratings, master-oscillator power amplifiers, and
fiber-coupled modules of the above. In all cases we show very low rates of degradation in optical power and the absence
of sudden failure from catastrophic optical damage or from laser-package interactions.
We present recent advances in high power semiconductor laser bars and arrays at near infrared and eye-safe
wavelengths. We report on increased spectral brightness with internal gratings to narrow and stabilize the spectrum and
increased spatial brightness in multimode and single mode devices. These devices have the potential to dramatically
improve diode pumped systems and enable new direct diode applications.
We present recent advances in high power semiconductor laser bars and arrays at near infrared and eye-safe
wavelengths. We report on increased spectral brightness with internal gratings to narrow and stabilize the spectrum and
increased spatial brightness in multimode and single mode devices. These devices have the potential to dramatically
improve diode pumped systems and enable new direct diode applications.
We present recent advances in high power multimode and single semiconductor lasers. We review high power operation
with increased spectral brightness using on-chip internal gratings and increased spatial brightness at wavelengths from
the near infrared to the eye-safe regime. New high power, high brightness fiber coupled semiconductor lasers are
described.
We present recent advances in high power semiconductor laser bars and arrays at eye-safe wavelengths including
increased spectral brightness with internal gratings to narrow and stabilize the spectrum. These devices have the
potential to dramatically improve diode pumped Er:YAG systems and enable new direct diode applications.
KEYWORDS: Semiconductor lasers, Fiber couplers, High power lasers, Diodes, High power diode lasers, Waveguides, Nonabsorbing mirrors, Fiber lasers, Near infrared, Semiconductors
We present recent advances in high power semiconductor laser bars and arrays at near infrared wavelengths including
increased spectral brightness with internal gratings to narrow and stabilize the spectrum and increased spatial brightness
with multimode and high power single mode performance. These devices have the potential to dramatically improve
diode pumped systems and enable new direct diode applications.
We present recent advances in high power semiconductor lasers including increased spectral brightness using on-chip
internal gratings and increased spatial brightness at wavelengths from the near infrared to the eye-safe regime.
We present theoretical analysis and experimental data from a monolithic semiconductor laser and optical parametric oscillator device which generates near-infrared laser beam and converts it to a longer mid-infrared wavelength by modal phase matching. The device design exploits the strong optical nonlinearity and transparency of III-V compound semiconductors while achieving phase matching of the near-infrared pump beam to the mid-infrared product beam(s). These devices have the potential to dramatically improve the CW Mid-IR power available at room temperature from monolithic semiconductor lasers, making them ideal for a broad range of applications including infrared countermeasures, detecting chemical weapons, imaging, and fog-penetrating optical communications.
We present recent advances in high power semiconductor laser bars and arrays at wavelengths from the near infrared to the eye-safe regime including increased spectral brightness with internal gratings to narrow and stabilize the spectrum, increased spatial brightness with multimode and high power single mode performance, and reduced cost architectures from high power surface emitting 2-dimensional arrays. These devices have the potential to dramatically improve diode pumped systems and enable new direct diode applications.
We review recent advances in high power semiconductor lasers including increased spectral brightness, increased spatial brightness, and reduced cost architectures at wavelengths from the near infrared to the eye-safe regime. Data are presented which demonstrate both edge emitter devices and high power surface emitting 2-dimensional arrays with internal gratings to narrow and stabilize the spectrum. Diodes with multimode high spatial brightness and high power single mode performance in the 808 and 976nm regime are described, and advances in high power bars at eye-safe wavelengths are presented. These devices have the potential to dramatically improve diode pumped systems and enable new direct diode applications.
KEYWORDS: Semiconductor lasers, Diodes, High power lasers, Mirrors, Laser development, Reliability, Waveguides, High power diode lasers, Materials processing, Solid state lasers
Advances in high power semiconductor lasers such as increased spectral brightness, increased spatial brightness, and reduced cost architectures at wavelengths from the near infrared to the eye-safe regime have the potential to dramatically improve diode pumped systems and enable new direct diode applications. Data are presented which demonstrate both edge emitter devices and high power surface emitting 2-dimensional arrays with internal gratings to narrow and stabilize the spectrum. Diodes with multimode high spatial brightness and high power single mode performance in the 808 and 976nm regime are described, and advances in high power arrays at eye-safe wavelengths are presented.
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