Mr. Travis Brist Profile

Travis Brist

Senior Product Marketing Manager at Synopsys Inc

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Publications (19)

Proceedings Article | 18 April 2013 Paper

Design-based metrology for development and manufacturing applications

Peter Brooker, Michael Lee, Ezequiel Vidal Russel, Shimon Levi, Sylvain Berthiaume, William Stanton, Travis Brist

Proceedings Volume 8681, 868123 (2013) https://doi.org/10.1117/12.2014182

KEYWORDS: Scanning electron microscopy, Metrology, Manufacturing, Optical proximity correction, Semiconducting wafers, Data modeling, Reticles, Feature extraction, Dysprosium, Data analysis

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Proceedings Article | 5 April 2012 Paper

Automated SEM recipe generation for OPC applications

Sylvain Berthiaume, Travis Brist, Peter Brooker, William Stanton, Brian Ward, Shimon Levi, Amit Siany

Proceedings Volume 8324, 83241W (2012) https://doi.org/10.1117/12.918083

KEYWORDS: Scanning electron microscopy, Metrology, Data modeling, Optical proximity correction, Electronic design automation, Semiconducting wafers, Manufacturing, Computer aided design, Photomasks, Critical dimension metrology

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Proceedings Article | 14 October 2011 Paper

Integrated advanced hotspot analysis techniques in the post-OPC verification flow

Makoto Miyagi, Peter Brooker, Chander Sawh, Travis Brist, Kunal Taravade

Proceedings Volume 8166, 81663P (2011) https://doi.org/10.1117/12.900609

KEYWORDS: Lithography, 3D modeling, Optical proximity correction, Photomasks, Computer simulations, Semiconducting wafers, Wafer-level optics, Source mask optimization, Tolerancing, Data modeling

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Proceedings Article | 2 April 2010 Paper

Metrology data cleaning and statistical assessment flow for modeling applications

Brian Ward, Sylvain Berthiaume, Travis Brist, Peter Brooker

Proceedings Volume 7638, 76381W (2010) https://doi.org/10.1117/12.847042

KEYWORDS: Data modeling, Metrology, Scanning electron microscopy, Optical proximity correction, Calibration, Statistical modeling, Process modeling, Data analysis, Data visualization, Diffractive optical elements

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Proceedings Article | 16 March 2009 Paper

Efficient hardware usage in the mask tapeout flow

Mathias Boman, Travis Brist, Yongdong Wang

Proceedings Volume 7274, 72742H (2009) https://doi.org/10.1117/12.815019

KEYWORDS: Optical proximity correction, Computed tomography, Photomasks, Electroluminescence, Lithium, Electronic design automation, Data processing, Manufacturing, Logic

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Proceedings Article | 21 March 2007 Paper

Optimizing gate layer OPC correction and SRAF placement for maximum design manufacturability

Travis Brist, Le Hong, Ayman Yehia, Tamer Tawfik, Shumay Shang, Kyohei Sakajiri, John Sturtevant

Proceedings Volume 6521, 65211L (2007) https://doi.org/10.1117/12.712748

KEYWORDS: SRAF, Optical proximity correction, Critical dimension metrology, Manufacturing, Photomasks, Model-based design, Antimony, Design for manufacturability, Optimization (mathematics), Resolution enhancement technologies

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Proceedings Article | 20 October 2006 Paper

Minimizing yield-loss risks through post-OPC verification

Ching-Heng Wang, Qingwei Liu, Liguo Zhang, Gen-Sheng Gao, Travis Brist, Tom Donnelly, Shumay Shang

Proceedings Volume 6349, 63494N (2006) https://doi.org/10.1117/12.686585

KEYWORDS: Manufacturing, Optical proximity correction, Lithography, Photomasks, Semiconducting wafers, Critical dimension metrology, Scanning electron microscopy, Semiconductor manufacturing, Reticles, Silicon

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Proceedings Article | 14 March 2006 Paper

Impact of process variation on 65nm across-chip linewidth variation

Le Hong, Travis Brist, Pat LaCour, John Sturtevant, Martin Niehoff, Philipp Niedermaier

Proceedings Volume 6156, 61560Q (2006) https://doi.org/10.1117/12.660541

KEYWORDS: Critical dimension metrology, Optical proximity correction, Manufacturing, Tolerancing, Lithography, Printing, Photomasks, Resolution enhancement technologies, Semiconducting wafers, Silicon

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Proceedings Article | 9 November 2005 Paper

Integrated post tape outflow for fast design to mask turn-around time

Chi-Yuan Hung, Qingwei Liu, Liguo Zhang, Shumay Shang, George Bailey, Andrew Jost, Travis Brist

Proceedings Volume 5992, 599251 (2005) https://doi.org/10.1117/12.629042

KEYWORDS: Optical proximity correction, Photomasks, Data modeling, Back end of line, Semiconducting wafers, Visualization, Databases, Scanning electron microscopy, Data integration, Metals

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Proceedings Article | 8 November 2005 Paper

Reverse engineering source polarization error

George Bailey, Kostas Adam, Travis Brist, Olivier Toublan, Andrew Estroff

Proceedings Volume 5992, 599234 (2005) https://doi.org/10.1117/12.632420

KEYWORDS: Polarization, Data modeling, Reverse modeling, Error analysis, Immersion lithography, Reverse engineering, Critical dimension metrology, Semiconducting wafers, Calibration, Lithography

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Proceedings Article | 8 November 2005 Paper

Source polarization and OPC effects on illumination optimization

Travis Brist, George Bailey, Alexander Drozdov, Andres Torres, Andrew Estroff, Eric Hendrickx

Proceedings Volume 5992, 599232 (2005) https://doi.org/10.1117/12.632371

KEYWORDS: Optical proximity correction, Polarization, Lithographic illumination, Lithography, Visualization, Immersion lithography, Fiber optic illuminators, Optical design, Scanners, Data modeling

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Proceedings Article | 8 November 2005 Paper

Model-based insertion and optimization of assist features with application to contact layers

Shumay Shang, Yuri Granik, Lisa Swallow, Li-guo Zhang, Travis Brist, Andres Torres, Chi-Yuan Hung, Qingwei Liu

Proceedings Volume 5992, 59921Y (2005) https://doi.org/10.1117/12.632345

KEYWORDS: SRAF, Photomasks, Model-based design, Source mask optimization, Optical proximity correction, Critical dimension metrology, Optimization (mathematics), Lithography, Semiconducting wafers, Scanning electron microscopy

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Proceedings Article | 12 May 2005 Paper

Illumination optimization effects on OPC and MDP

Travis Brist, Steffen Schulze

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.600378

KEYWORDS: Optical proximity correction, Critical dimension metrology, Data modeling, Process modeling, Optimization (mathematics), Mask making, Tolerancing, Manufacturing, Structural design

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Proceedings Article | 5 May 2005 Paper

Integrating RET and mask manufacturability in memory designs for local interconnect for sub-100nm trenches

Nishrin Kachwala, Walter Iandolo, Travis Brist, Rick Farnbach

Proceedings Volume 5756, (2005) https://doi.org/10.1117/12.602539

KEYWORDS: Optical proximity correction, Photomasks, Manufacturing, SRAF, Computer aided design, Resolution enhancement technologies, Design for manufacturability, Design for manufacturing, Instrument modeling, Capacitance

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Proceedings Article | 6 December 2004 Paper

Integrating RET and mask manufacturability in designs for local interconnect for sub-100-nm trenches

Nishrin Kachwala, Travis Brist, Rick Farnbach

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569848

KEYWORDS: Optical proximity correction, Photomasks, Manufacturing, SRAF, Resolution enhancement technologies, Computer aided design, Design for manufacturing, Design for manufacturability, Instrument modeling, Lithography

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Proceedings Article | 10 July 2003 Paper

Model-assisted placement of subresolution assist features: experimental results

Travis Brist, Juan Torres

Proceedings Volume 5042, (2003) https://doi.org/10.1117/12.485421

KEYWORDS: Data modeling, Scattering, Optical proximity correction, SRAF, Calibration, Reticles, Scanning electron microscopy, Process modeling, Image processing, Lithography

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Proceedings Article | 10 July 2003 Paper

Effective multicutline QUASAR illumination optimization for SRAM and logic

Travis Brist, George Bailey

Proceedings Volume 5042, (2003) https://doi.org/10.1117/12.504321

KEYWORDS: Optical proximity correction, Lithographic illumination, Logic, Manufacturing, SRAF, Lithography, Reticles, Optimization (mathematics), Cadmium, Semiconducting wafers

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Lithographers face many hurdles to achieve the ever-shrinking process design rules (PDRs). Proximity effects are becoming more and more an issue requiring model-based Optical Proximity Correction (OPC), sub-resolution assist features, and properly tuned illumination settings in order to minimize these effects while providing enough contrast to maintain a viable process window. For any type of OPC application to be successful, a fundamental illumination optimization must first be completed. Unfortunately, the once trivial illumination optimization has evolved into a major task for ASIC houses that require a manufacturable process window for isolated logic structures as well as dense SRAM features. Since these features commonly appear on the same reticle, today’s illumination optimization must look at “common” process windows for multiple cutlines that include a variety of different feature types and pitches. This is a daunting task for the current single feature simulators and requires a considerable amount of simulation time, engineering time, and fab confirmation data in order to come up with an optimum illumination setting for such a wide variety of features. An internal Illumination Optimization (ILO) application has greatly simplified this process by allowing the user to optimize an illumination setting by simultaneously maximizing the “combined” DOF (depth of focus) over multiple cutlines (simulation sites). Cutlines can be placed on a variety of structures in an actual design as well as several key pitches. Any number of the cutlines can be constrained to the gds drawn CD (critical dimension) while others can be allowed to “float” with pseudo OPC allowing the co-optimization of the illumination setting for any OPC that may be applied in the final design. The automated illumination optimization is then run using a tuned model. Output data is a suggested illumination setting with supporting data used to formulate the recommendation. This paper will present the multi-cutline ILO process and compare it with the work involved to do the same optimization using a single feature simulator. Examples will be shown where multi-cutline ILO was able to resolve hard annular aberrations while maintaining the DOF.

Proceedings Article | 30 July 2002 Paper

Reticle process effects on OPC models

Travis Brist, George Bailey

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474521

KEYWORDS: Photomasks, Optical proximity correction, Reticles, Data modeling, Process modeling, Semiconducting wafers, Scanning electron microscopy, Image processing, Etching, Deep ultraviolet

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Proceedings Article | 30 July 2002 Paper

OPC applications into embedded-OPC designs

George Bailey, Travis Brist

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474502

KEYWORDS: Optical proximity correction, Model-based design, Transistors, Process modeling, Photomasks, Logic, Etching, Optimization (mathematics), Photoresist processing, Data modeling

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Showing 5 of 19 publications

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