In this paper we perform a foundational study on the impact of quartz etched depth, and optical density (OD) of mask opaque area, the 3D effect in ArF immersion lithography at advanced process node. The after development inspection (ADI) critical dimension (CD) variation may be caused by these 2 mentioned factors on the photomask, even the mask CD value of the measurement point is the same. Different cleaners and etchers which fix the same cleaning and etching time, induce different OD of reticle opaque patterns and several quartz etched depths. The relations between OD of reticle opaque patterns / quartz etched depth and ADI CD are the significant subject for successful pilot run which may moderate pilot run time and reduce rework costs in the lithography process. The focus of this study is the characterization of the correlation between OD of reticle opaque patterns / etched quartz depths and ADI CD. We experimentally study the structures from the theoretical introduction on the mask 3D phenomena, all of results are obtained using a MoSi binary ArF blank. A comprehensive wafer CD measurement result will be demonstrated in different OD of reticle opaque patterns and etched quartz depth, both simulation and experimentally based. The effect of fabricating the photomask quartz trenches will also be studied as well as the impact on through pitch CD and exposure latitude. The goal of this study is the demonstration of the practical influence on mask OD and the etched quartz depth of leading edge photomasks.
Design weak points that have narrow process window and limits wafer yield, or hotspots, continue to be a major issue in semiconductor photolithography. Resolution enhancement techniques (RET) such as advanced optical proximity correction (OPC) techniques and source mask optimization (SMO) are employed to mitigate these issues. During yield ramp for a given technology node, full-chip lithography simulation, pattern-matching and machine learning are adopted to detect and remedy the weak points from the original design [1], [2]. This is typically an iterative process by which these points are identified in short-loop lithography testing. Design retarget and/or OPC modifications are made to enhance process window until the yield goal is met. This is a high cost and time consuming process that results in a slow yield ramp for existing production nodes and increased time to market (TTM) for new node introduction. Local hotspot correction through mask and wafer harmonization is a method to enhance wafer yield with low cost and short cycle time compared to the iterative method. In this paper, a fast and low cost approach to hotspot correction is introduced. Hotspots were detected on wafer after OPC and characterized by using advanced mask characterization and optimization (AMCO) techniques. Lithographic simulations and AIMS measurement were used to verify the hotspot correction method. Finally, the validity of this new approach was evaluated by process window analysis and circuit probe yield test at wafer.
A new technology transforms mask inspection images through focus into 3D lithography images in resist. This enables early detection and ranking of hotspots, and distinguishes mask-induced and process-induced hotspots. The results can be used in several ways including: 1) feed back to OPC teams to improve process window; 2) feed forward to the litho team for scanner adjustment; and, 3) feed forward to wafer inspection in the form of care areas to reduce time to result for wafer-based process window discovery.
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