Prof. Henri-Jean M. Drouhin Profile

Prof. Henri-Jean M. Drouhin

professor emeritus at Ecole Polytechnique

SPIE Involvement:

Conference Program Committee | Editor | Author

Publications (45)

Proceedings Article | 4 October 2022 Presentation

Spin-dependent photocurrent in ferromagnetic metal / semiconductor tunnel junctions (Conference Presentation)

Henri-Jean Drouhin, Viatcheslav Safarov, Igor Rozhansky, Henri Jaffrès, Yuan Lu

Proceedings Volume PC12205, PC122050H (2022) https://doi.org/10.1117/12.2635866

KEYWORDS: Semiconductors, Metals, Ferromagnetics, Sensors, Telecommunications, Spin polarization, Solid state lasers, Solid state electronics, Photonic devices, Optoelectronic devices

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Proceedings Article | 3 October 2022 Presentation + Paper

Linear gain anisotropy and mode profile asymmetry in spin-VCSELs: extended spin-flip models

Mariusz Drong, Tibor Fördös, Henri Jaffrès, Kamil Postava, Henri-Jean Drouhin

Proceedings Volume 12205, 122050A (2022) https://doi.org/10.1117/12.2636203

KEYWORDS: Anisotropy, Polarization, Birefringence, Vertical cavity surface emitting lasers, Quantum wells, Electromagnetism, Spin polarization

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Proceedings Article | 5 March 2022 Presentation + Paper

Effect of high-energy electron irradiation on the electronic properties of beta-gallium oxide

Thi-Huong Dang, Marcin Konczykowski, Viatcheslav Safarov, Elie Hammou, Lucia Romero Vega, Nadège Ollier, Romain Grasset, Antonino Alessi, Henri-Jean Drouhin, Henri Jaffrès, Valery Yu. Davydov, Agnieszka Wołoś, David Rogers, Vinod Sandana, Philippe Bove, Féréchteh Teherani

Proceedings Volume 12002, 1200207 (2022) https://doi.org/10.1117/12.2622559

KEYWORDS: Gallium, Luminescence, Ions, Crystals, Semiconductors, Temperature metrology, Oxides, Annealing, Chromium, Ultraviolet radiation

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Proceedings Article | 5 March 2022 Presentation

Recombination-times mismatch in spin photodiodes

Henri-Jean Drouhin, Viatcheslav Safarov, Igor Rozhansky, Henri Jaffrès, Yuan Lu

Proceedings Volume PC12009, PC120090L (2022) https://doi.org/10.1117/12.2615977

KEYWORDS: Photodiodes, Sensors, Telecommunications, Spin polarization, Solid state lasers, Solid state electronics, Semiconductors, Physics, Optoelectronics, Optical interconnects

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Proceedings Article | 5 March 2022 Presentation + Paper

Polarization dynamics of grating-based spin-lasers

Mariusz Drong, Jan Peřina, Maciej Dems, Tomasz Czyszanowski, Tibor Fördös, Henri Jaffrès, Kamil Postava, Henri-Jean Drouhin

Proceedings Volume 12009, 1200907 (2022) https://doi.org/10.1117/12.2610079

KEYWORDS: Birefringence, Anisotropy, Polarization, Quantum wells, Mirrors, Dichroic materials, Physics, Ultrafast phenomena, Terahertz radiation, Semiconductors

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Proceedings Article | 3 August 2021 Presentation

Ultrafast spin-charge interconversion in Rashba states probed by time-domain THz spectroscopy

Jacques Hawecker, Enzo Rongione, Laëtitia Baringthon, Thi-Huong Dang, Giovanni Baez Flores, Duy-Quang TO, Juan-Carlos Rojas-Sánchez, Nong Hanond, Juliette Mangeney, Jerome Tignon, Florian Godel, Sophie Collin, Pierre Seneor, Nicolas Reyren, Manuel Bibes, Albert Fert, Abdelmadjid Anane, Jean-Marie George, Laurent Vila, Cosset-Cheneau Maxen, Vincent Cros, Agnès Barthélemy, Daniel Dolfi, Romain Lebrun, Paolo Bortolotti, Kirill Belashchenko, Sukhdeep Dhillon, Henri Jaffrès, Luca Perfetti, Henri-Jean Drouhin, Yannis Laplace, Romain Grasset, Jingwei Dong, Patrick Le Fèvre, Gilles Patriarche, Aristide Lemaître, Athanasios Dimoulas, Claudia Felser

Proceedings Volume 11805, 118050L (2021) https://doi.org/10.1117/12.2594133

KEYWORDS: Terahertz radiation, Ultrafast laser spectroscopy, Spectroscopy, Transition metals, Polarization, Platinum, Physics, Metals, Iron, Ferromagnetics

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Proceedings Article | 1 August 2021 Presentation

Polarization dynamics of highly-anisotropic spin lasers

Mariusz Drong, Henri Jaffrès, Jan Peřina, Tibor Fördös, Kamil Postava, Henri-Jean Drouhin

Proceedings Volume 11805, 118050V (2021) https://doi.org/10.1117/12.2596043

KEYWORDS: Polarization, Terahertz radiation, Laser stabilization, Finite-difference time-domain method, Algorithm development, Ultrafast phenomena, Transmitters, Semiconductor lasers, Scattering, Photonics

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Proceedings Article | 1 August 2021 Presentation

Asymmetric scattering and tunneling of electrons due to spin-orbit and exchange interaction

Igor Rozhansky, Konstantin Denisov, Mikhail Rakitskii, Nikita Averkiev, Henri Jaffres, Henri-Jean Drouhin

Proceedings Volume 11805, 1180514 (2021) https://doi.org/10.1117/12.2595571

KEYWORDS: Scattering, Electrons, Magnetism, Semiconductors, Magnetic semiconductors, Heterojunctions, Spin polarization, Group III-V semiconductors

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Proceedings Article | 21 August 2020 Presentation

Chirality induced skew scattering and tunneling

Igor Rozhansky, Konstantin Denisov, Duy-Quang To, Henri Jaffrès, Henri-Jean Drouhin

Proceedings Volume 11470, 1147015 (2020) https://doi.org/10.1117/12.2568489

KEYWORDS: Scattering, Magnetism, Magnetic semiconductors, System on a chip, Heterojunctions, Spin polarization, Semiconductors

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Proceedings Article | 20 August 2020 Presentation

Eigenmodes of spin-VCSELs with local optical anisotropies: Above-threshold lasing

Mariusz Drong, Tibor Fördös, Henri Jaffrès, Premysl Ciompa, Kamil Postava, Jan Perina, Jaromír Pištora, Henri-Jean Drouhin

Proceedings Volume 11470, 114702G (2020) https://doi.org/10.1117/12.2570929

KEYWORDS: Anisotropy, Photon polarization, Polarization, Semiconductor lasers, Vertical cavity surface emitting lasers, Optical properties, Wave propagation, Combustion, Modeling

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Proceedings Article | 20 August 2020 Presentation

Wave function matching at [110] semiconductor based heterostructures from multiband k.p point of view

Duy-Quang To, Thi Huong Dang, Thi Lam Hoai Nguyen, Viatcheslav Safarov, Henri-Jean Drouhin, Henri Jaffrès

Proceedings Volume 11470, 114702R (2020) https://doi.org/10.1117/12.2570951

KEYWORDS: Semiconductors, Heterojunctions, Group IV semiconductors, Group III-V semiconductors

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Proceedings Article | 10 September 2019 Presentation

Chiral and topological Hall effects (Conference Presentation)

Igor Rozhansky, Konstantin Denisov, Maria Lifshits, Nikita Averkiev, Erkki Lahderanta, Henri Jaffrès, Henri-Jean Drouhin

Proceedings Volume 11090, 110901S (2019) https://doi.org/10.1117/12.2529913

KEYWORDS: Scattering, Magnetism, Semiconductors, Interfaces, Electron transport, Magnetic semiconductors

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Proceedings Article | 10 September 2019 Presentation

Modeling of spin-VCSELs with periodic structures (Conference Presentation)

Kamil Postava, Premysl Ciompa, Tibor Fördös, Mariusz Drong, Henri Jaffrès, Henri-Jean Drouhin, Jaromír Pištora

Proceedings Volume 11090, 1109038 (2019) https://doi.org/10.1117/12.2532067

KEYWORDS: Laser development, Anisotropy, Modulation, Finite element methods, Finite-difference time-domain method, Vertical cavity surface emitting lasers, Optical properties, Switching, Beam shaping, Quantum dots

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Proceedings Article | 10 September 2019 Presentation

Spin-orbit currents, spin-transfer torque, and anomalous tunneling in III-V heterostructures probed by advanced 30 bands and 40-bands k.p tunneling methods (Conference Presentation)

Duy-Quang To, Thi Lam Hoai Nguyen, Viatcheslav Safarov, Henri-Jean Drouhin, Henri-Yves Jaffrès

Proceedings Volume 11090, 1109044 (2019) https://doi.org/10.1117/12.2528441

KEYWORDS: Heterojunctions, Group III-V semiconductors, Magnetic semiconductors, Semiconductors, Interfaces, Ferromagnetics, System on a chip, Particles, Quantum wells, Reflection

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Spinorbitronics in III-V semiconductors, e.g. involving the GaMnAs ferromagnetic semiconductors, uses the properties of spin-orbit coupling (SOC) to generate currents of angular momentum [1-2]. Thoses are now essential to control the magnetization state of a magnet [3], or moving a domain wall [4] via the generalized spin-Hall effect of III-V possibly involving Rashba and Dresselhaus terms [4]. The interplay between particle spin and orbital motion is also at the basis of new families of effects played e. g. by the Anomalous Tunnel Hall effect described by the appearance of a lateral charge current transverse to a tunneling spin-current [5–7] ; or the spin-galvanic effects [8]. The ensemble of those complex phenomena requires a clear description of the spin-currents anatomy with advance calculation tools. In this work, as an extension to previous contributions [5], we study unconventional quantum effects resulting in a giant transport asymmetry of carriers and spin-to-charge conversion in semiconductor interfaces, tunnel barriers or quantum wells. Those are composed of ferromagnets and strong spin-orbit materials, e. g. III-V compounds with magnetizations of opposite direction (AP) or in the geometry of spin-injection devices. The symmetry of the structure allows a difference of transmission upon respective positive or negative incidence vs. the reflection plane defined by the magnetization and the surface normal. We will restrict ourself to the effect of bulk Dresselhaus terms by using the simplest form of the quantum boundary conditions. We will first detail the robustness of our advanced 30-band and 40 band tunneling codes free of spurious states effects and involving the higher electronic bands involving the relevant spin-orbit contributions. We will demonstrate that refined boundary conditions involving surface potentials, like Rashba terms, arising from the symmetry breaking at interfaces may lead to equivalent effects by their own. In a second part, we emphasize on the perturbation calculation techniques needed to understand this phenomena and to the case of the core SOI in the valence band (VB). References: [1] Tomasz Dietl and Hideo Ohno, Rev. Mod. Phys. 86, 187 (2014). [2] T. Jungwirth et al., Rev. Mod. Phys. 86, 855 (2014). [3] M. Elsen et al., Phys. Rev. B 73, 035303 [4] L. Thevenard et al., Phys. Rev. B 95, 054422 (2017). [5] T. Huong Dang, H. Jaffrès, T. L. Hoai Nguyen, and H.-J. Drouhin, Phys. Rev. B 92, 060403(R) (2015). [6] A. Matos-Abiague and J. Fabian, Phys. Rev. Lett. 115, 056602 (2015). [7] M. Jamet, A. Barski, T. Devillers, V. Poydenot et al., Nat. Mat. 5, 653-659 (2006). [10] S. D. Ganichev et al., Spinpolarization by current, ""Handbook of spin-transport & magnetism"", (Chapman and Hall), 2016.

Proceedings Article | 1 February 2019 Open Access

Dynamical and anisotropic properties of spin-VCSELs

M. Drong, T. Fördös, H. Jaffrès, K. Postava, J. Peřina, H.-J Drouhin, J. Pištora

Proceedings Volume 10926, 1092614 (2019) https://doi.org/10.1117/12.2515288

KEYWORDS: Quantum wells, Anisotropy, Polarization, Dichroic materials, Birefringence, Laser resonators, Semiconductors, Scattering, Electromagnetism, Photons

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Proceedings Article | 19 September 2017 Presentation

Eigenmodes of semiconductor spin-lasers with local linear birefringence and gain dichroism (Conference Presentation)

Henri Jaffrès, Tibor Fordos, Kamil Postava, Jaromir Pištora, Arnaud Garnache, Henri-Jean Drouhin

Proceedings Volume 10357, 103572I (2017) https://doi.org/10.1117/12.2278023

KEYWORDS: Quantum wells, Birefringence, Semiconductors, Dichroic materials, Vertical cavity surface emitting lasers, Photons, Interfaces, Quantum optics, Semiconductor lasers, Ellipsometry

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Proceedings Article | 26 September 2016 Presentation + Paper

Spin-orbit assisted chiral-tunneling at semiconductor tunnel junctions: study with advanced 30-band k x p methods

Huong Dang, E. Erina, Hoai L. Nguyen, H. Jaffrès, H.-J. Drouhin

Proceedings Volume 9931, 993127 (2016) https://doi.org/10.1117/12.2238796

KEYWORDS: Magnetic semiconductors, Semiconductors, Interfaces, Magnetism, Scattering, Gallium arsenide, Electrodes, P-type semiconductors, Heterojunctions, Resistance

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Proceedings Article | 5 October 2015 Presentation

Transport at spin-orbit and exchange-split interfaces and universal giant asymmetry (Presentation Recording)

Huong Thi Dang, Henri Jaffrès, T. L. Hoai Nguyen, Henri-Jean Drouhin

Proceedings Volume 9551, 95510R (2015) https://doi.org/10.1117/12.2189171

KEYWORDS: Interfaces, Electrons, Systems modeling, Group III-V semiconductors, Heterojunctions, Magnetic semiconductors, Semiconductors, Electrodes, Magnetism, Video

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Proceedings Article | 1 May 2015 Paper

Modeling of anisotropic grating structures with active dipole layers

K. Postava, T. Fördös, H. Jaffrès, L. Halagačka, H. Drouhin, J. Pištora

Proceedings Volume 9516, 95160O (2015) https://doi.org/10.1117/12.2179443

KEYWORDS: Matrices, Scattering, Polarization, Light emitting diodes, Light scattering, Wave propagation, Physics, Electromagnetic scattering, Electromagnetism, Light

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Proceedings Article | 28 August 2014 Paper

Spin-Hall effects: from the two-channel model to Dyakonov-Perel equations

B. Madon, H.-J. Drouhin, D. Lacour, J.-E. Wegrowe

Proceedings Volume 9167, 91671O (2014) https://doi.org/10.1117/12.2063647

KEYWORDS: Magnetism, Electroluminescent displays, Radon, Electrodes, Scattering, Promethium, Spin polarization, Polarization, Anisotropy, Interfaces

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Proceedings Article | 26 September 2013 Paper

Thermokinetic considerations about spin-dependent voltage generated by heat currents

Jean-Eric Wegrowe, Henri-Jean Drouhin

Proceedings Volume 8813, 88130C (2013) https://doi.org/10.1117/12.2025736

KEYWORDS: Magnetism, Electroluminescent displays, Spintronics, Electrodes, Optical spheres, Interfaces, Dielectrics, Metals, Particles, Ferromagnetics

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Proceedings Article | 26 September 2013 Paper

Discontinuous envelope function in semiconductor heterostructures

Henri-Jean Drouhin, Federico Bottegoni, T. L. Hoai Nguyen, Jean-Eric Wegrowe, Guy Fishman

Proceedings Volume 8813, 88132Y (2013) https://doi.org/10.1117/12.2026511

KEYWORDS: Interfaces, Heterojunctions, Semiconductors, Electrons, Electroluminescent displays, Gallium arsenide, Crystals, Group III-V semiconductors, Spintronics, Neodymium

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Proceedings Article | 4 February 2013 Paper

Transport properties related to spin-orbit interaction

Henri-Jean Drouhin, Federico Bottegoni, Alberto Ferrari, Thi Lam Hoai Nguyen, Jean-Eric Wegrowe, Guy Fishman

Proceedings Volume 8631, 86312A (2013) https://doi.org/10.1117/12.2010757

KEYWORDS: Interfaces, Gallium arsenide, Electrons, Electroluminescent displays, Heterojunctions, Particles, Spintronics, Group III-V semiconductors, Crystals, Physics

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Proceedings Article | 9 October 2012 Paper

Thermal spin-accumulation

Jean-Eric Wegrowe, Henri-Jean Drouhin, Daniel Lacour

Proceedings Volume 8461, 84610D (2012) https://doi.org/10.1117/12.936328

KEYWORDS: Dielectrics, Electrodes, Spintronics, Interfaces, Thermoelectric materials, Magnetism, Sensors, Magnons, Metals, Ferromagnetics

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Proceedings Article | 2 March 2012 Paper

Novel process for direct bonding of GaN onto glass substrates using sacrificial ZnO template layers to chemically lift-off GaN from c-sapphire

D. Rogers, A. Ougazzaden, V. Sandana, T. Moudakir, A. Ahaitouf, F. Hosseini Teherani, S. Gautier, L. Goubert, I. Davidson, K. Prior, R. McClintock, P. Bove, H.-J. Drouhin, M. Razeghi

Proceedings Volume 8263, 82630R (2012) https://doi.org/10.1117/12.916013

KEYWORDS: Gallium nitride, Zinc oxide, Glasses, Crystals, Scanning electron microscopy, Wafer bonding, X-ray diffraction, Single crystal X-ray diffraction, Wet etching, Optical microscopy

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Proceedings Article | 1 March 2012 Paper

ZnO nanorod electrodes for hydrogen evolution and storage

S. Harinipriya, B. Usmani, D. Rogers, V. Sandana, F. Hosseini Teherani, A. Lusson, P. Bove, H.-J. Drouhin, M. Razeghi

Proceedings Volume 8263, 82631Y (2012) https://doi.org/10.1117/12.927622

KEYWORDS: Zinc oxide, Electrodes, Silicon, Hydrogen, Ions, Metals, Pulsed laser deposition, Thermodynamics, Platinum, Nanorods

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Proceedings Article | 1 March 2012 Paper

Energy harvesting from millimetric ZnO single wire piezo-generators

D. Rogers, C. Carroll, P. Bove, V. Sandana, L. Goubert, A. Largeteau, F. Hosseini Teherani, G. Demazeau, R. McClintock, H. -J. Drouhin, M. Razeghi

Proceedings Volume 8263, 82631X (2012) https://doi.org/10.1117/12.927621

KEYWORDS: Zinc oxide, Crystals, Energy harvesting, Silver, Scanning electron microscopy, Oxygen, Indium, Copper, Photography, Nanowires

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Proceedings Article | 21 January 2012 Paper

Practical rules for spin-orbit engineering of [110]-oriented III-V heterostructures

Henri-Jean Drouhin, Federico Bottegoni, Guy Fishman, Jean-Eric Wegrowe

Proceedings Volume 8268, 82682V (2012) https://doi.org/10.1117/12.915700

KEYWORDS: Heterojunctions, Interfaces, Gallium arsenide, Crystals, Systems modeling, Scattering, Electron transport, Group III-V semiconductors, Nanophotonics, Current controlled current source

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Proceedings Article | 16 September 2011 Paper

Probability current in presence of Spin-Orbit Interaction

Federico Bottegoni, Henri-Jean Drouhin, Guy Fishman, Jean-Eric Wegrowe

Proceedings Volume 8100, 810012 (2011) https://doi.org/10.1117/12.893592

KEYWORDS: Heterojunctions, Semiconductor physics, Spintronics, Semiconductors, Physics, Crystals, Gallium arsenide, Current controlled current source, Matrices, Particles

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Proceedings Article | 16 September 2011 Paper

The paradoxical role played by the angular momentum conservation in magnetization dynamics

Jean-Eric Wegrowe, Henri-Jean Drouhin

Proceedings Volume 8100, 81000C (2011) https://doi.org/10.1117/12.893831

KEYWORDS: Magnetism, Spintronics, Particles, Electroluminescent displays, Picosecond phenomena, Physics, Neodymium, Picture Archiving and Communication System, Magnetic semiconductors, Ferromagnetics

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Proceedings Article | 11 March 2011 Paper

Amorphous ZnO films grown by room temperature pulsed laser deposition on paper and mylar for transparent electronics applications

D. Rogers, V. Sandana, F. Hosseini Teherani, R. McClintock, M. Razeghi, H.-J. Drouhin

Proceedings Volume 7940, 79401K (2011) https://doi.org/10.1117/12.879928

KEYWORDS: Zinc oxide, Adaptive optics, Electronics, Pulsed laser deposition, Crystals, Scanning electron microscopy, Amorphous semiconductors, Optical properties, Zinc, Oxides

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Proceedings Article | 24 August 2009 Paper

Probability current related to a non-quadratic Hamiltonian: application to semiconductors

Henri-Jean Drouhin, Jean-Eric Wegrowe, T. L. Hoai Nguyen, Guy Fishman

Proceedings Volume 7398, 73980Z (2009) https://doi.org/10.1117/12.828037

KEYWORDS: Semiconductors, Phase shifts, Crystals, Electrons, Magnetic semiconductors, Magnetism, Gallium arsenide, Superlattices, Group III-V semiconductors, Gallium antimonide

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Proceedings Article | 18 August 2009 Paper

How to transfer spins from the electric current to the ferromagnetic degree of freedom?

J.-E. Wegrowe, H.-J. Drouhin

Proceedings Volume 7398, 739809 (2009) https://doi.org/10.1117/12.828052

KEYWORDS: Spintronics, Current controlled current source, Thermodynamics, Nanostructures, Electrons, Ferromagnetics

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Proceedings Article | 28 February 2009 Paper

Fabrication of nanostructured heterojunction LEDs using self-forming moth eye type arrays of n-ZnO nanocones grown on p-si (111) substrates by pulsed laser deposition

David Rogers, V. Sandana, F. Hosseini Teherani, M. Razeghi, H.-J. Drouhin

Proceedings Volume 7217, 721708 (2009) https://doi.org/10.1117/12.817030

KEYWORDS: Nanostructures, Zinc oxide, Light emitting diodes, Heterojunctions, Silicon, Nanostructuring, Antireflective coatings, Electroluminescence, Nanolithography, Crystals

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Proceedings Article | 4 September 2008 Paper

Diffusive spin-transfer: a derivation of the critical current from the spin-accumulation

J.-E. Wegrowe, H.-J. Drouhin

Proceedings Volume 7036, 703609 (2008) https://doi.org/10.1117/12.797263

KEYWORDS: Stochastic processes, Spintronics, Magnetism, Thermodynamics, Diffusion, Ferromagnetics

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Proceedings Article | 30 August 2008 Paper

Spin-dependent tunneling through a spin-orbit-split barrier

Henri-Jean Drouhin, Guy Fishman, T. L. Hoai Nguyen, Jean-Eric Wegrowe

Proceedings Volume 7036, 70360M (2008) https://doi.org/10.1117/12.797997

KEYWORDS: Electrons, Polarization, Gallium arsenide, Crystals, Group III-V semiconductors, Magnetism, Semiconductors, Spintronics, Mirrors, Interfaces

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Proceedings Article | 7 March 2008 Paper

MOCVD growth of ZnO nanostructures using Au droplets as catalysts

V. Sandana, D. Rogers, F. Teherani, R. McClintock, M. Razeghi, H.-J. Drouhin, M. Clochard, V. Sallet, G. Garry, F. Fayoud

Proceedings Volume 6895, 68950Z (2008) https://doi.org/10.1117/12.775632

KEYWORDS: Gold, Zinc oxide, Nanostructures, Annealing, Metalorganic chemical vapor deposition, Nanodroplets, Silicon, Scanning electron microscopy, Zinc, Nanorods

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Proceedings Article | 2 February 2007 Paper

Spin-dependent tunneling through a spin-orbit-split barrier

Henri-Jean Drouhin, Jean-Eric Wegrowe, T. L. Hoai Nguyen, Guy Fishman

Proceedings Volume 6479, 64790A (2007) https://doi.org/10.1117/12.717607

KEYWORDS: Semiconductors, Crystals, Group III-V semiconductors, Magnetic semiconductors, Quantum efficiency, Head, Spintronics, Magnetism, Quantum information, Nanophotonics

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Proceedings Article | 20 April 2006 Paper

Inconsistency of standard k•p band parameters

Marc-Henri Serre, Guy Fishman, Henri-Jean Drouhin

Proceedings Volume 6195, 61951B (2006) https://doi.org/10.1117/12.668973

KEYWORDS: Gallium arsenide, Semiconductors, Astatine, Semiconductor physics, Luminescence, Excitons, Reflectivity, Nanophotonics, Spectroscopy

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Proceedings Article | 28 February 2006 Paper

Anisotropic magneto-thermopower in 3d ferromagnets

J.-E. Wegrowe, H.-J. Drouhin

Proceedings Volume 6127, 612711 (2006) https://doi.org/10.1117/12.660710

KEYWORDS: Resistance, Interfaces, Electroluminescence, Thermoelectric materials, Scattering, Diffusion, Magnetism, Metals, Electrons, Ferromagnetics

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Proceedings Article | 25 March 2005 Paper

From spin diffusion to magnetization reversal: the four-channel approach

Jean-Eric Wegrowe, Henri-Jean Drouhin

Proceedings Volume 5732, (2005) https://doi.org/10.1117/12.584744

KEYWORDS: Magnetism, Electrons, Metals, Diffusion, Spin polarization, Interfaces, Anisotropy, Stochastic processes, Scattering, Ferromagnetics

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Proceedings Article | 6 July 2004 Paper

Extraordinary tunnel effect

Henri-Jean Drouhin, Guy Fishman, Nicolas Rougemaille, Soline Richard

Proceedings Volume 5359, (2004) https://doi.org/10.1117/12.524558

KEYWORDS: Thulium, Gallium arsenide, Semiconductors, Wave propagation, Magnetism, Signal attenuation, Crystals, Chemical elements, Quantum mechanics, Free space

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Proceedings Article | 10 October 2003 Paper

Highly spin-polarized electron emission from InGaAlAs strained layer with enlarged effective negative electron affinity

Yuri Mamaev, Henri-Jean Drouhin, G. Lampel, Arsen Subashiev, Yuri Yashin, Alexander Roshchansky

Proceedings Volume 5127, (2003) https://doi.org/10.1117/12.517427

KEYWORDS: Polarization, Gallium arsenide, Quantum efficiency, Quantum wells, Heterojunctions, Solids, Dielectric polarization, Doping, Semiconductors, Spin polarization

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Proceedings Article | 18 February 2002 Paper

Electron spin polarimeters based on the exchange asymmetry in ferromagnetic layers

Nicolas Rougemaille, C. Cacho, Henri-Jean Drouhin, G. Lampel, Y. Lassailly, Jacques Peretti, A. Schuhl

Proceedings Volume 4627, (2002) https://doi.org/10.1117/12.456252

KEYWORDS: Polarization, Sensors, Polarimetry, Electron beams, Spin polarization, Absorption, Magnetic sensors, Electron transport, Electrical engineering, Ferromagnetics

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Proceedings Article | 24 April 1995 Paper

Electron transmission through ultrathin metal layers and its spin dependence for magnetic structures

Henri-Jean Drouhin, G. Lampel, Y. Lassailly, A. van der Sluijs, C. Marliere

Proceedings Volume 2397, (1995) https://doi.org/10.1117/12.206906

KEYWORDS: Gold, Magnetism, Metals, Electron transport, Cobalt, Cesium, Sensors, Interfaces, Gallium arsenide, Modulation

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Showing 5 of 45 publications

Proceedings Volume Editor (15)

SPIE Conference Volume | 9 November 2022

Spintronics XV

SPIE Conference Volume | 17 August 2021

Spintronics XIV

SPIE Conference Volume | 16 September 2020

Spintronics XIII

SPIE Conference Volume | 4 October 2019

Spintronics XII

SPIE Conference Volume | 16 October 2018

Spintronics XI

SPIE Conference Volume | 3 October 2017

Spintronics X

SPIE Conference Volume | 22 November 2016

Spintronics IX

SPIE Conference Volume | 28 September 2015

Spintronics VIII

SPIE Conference Volume | 10 September 2014

Spintronics VII

SPIE Conference Volume | 27 September 2013

Spintronics VI

SPIE Conference Volume | 24 October 2012

Spintronics V

SPIE Conference Volume | 6 September 2011

Spintronics IV

SPIE Conference Volume | 17 August 2010

Spintronics III

SPIE Conference Volume | 20 August 2009

Spintronics II

SPIE Conference Volume | 29 August 2008

Spintronics

Showing 5 of 15 publications

Conference Committee Involvement (28)

Spintronics XVIII

3 August 2025 | San Diego, California, United States

Spintronics XVII

18 August 2024 | San Diego, California, United States

Spintronics XVI

20 August 2023 | San Diego, California, United States

Quantum Sensing and Nano Electronics and Photonics XIX

29 January 2023 | San Francisco, California, United States

Spintronics XV

21 August 2022 | San Diego, California, United States

Quantum Sensing and Nano Electronics and Photonics XVIII

24 January 2022 | San Francisco, California, United States

Spintronics XIV

1 August 2021 | San Diego, California, United States

Spintronics XIII

24 August 2020 | Online Only, California, United States

Quantum Sensing and Nano Electronics and Photonics XVII

2 February 2020 | San Francisco, California, United States

Spintronics XII

11 August 2019 | San Diego, California, United States

Quantum Sensing and Nano Electronics and Photonics XVI

3 February 2019 | San Francisco, California, United States

Spintronics XI

19 August 2018 | San Diego, California, United States

Spintronics X

6 August 2017 | San Diego, California, United States

Spintronics IX

28 August 2016 | San Diego, California, United States

Spintronics VIII

9 August 2015 | San Diego, California, United States

Spintronics VII

17 August 2014 | San Diego, California, United States

Spintronics VI

25 August 2013 | San Diego, California, United States

Spintronics V

12 August 2012 | San Diego, California, United States

Spintronics IV

21 August 2011 | San Diego, California, United States

Instrumentation, Metrology, and Standards for Nanomanufacturing IV

2 August 2010 | San Diego, California, United States

Spintronics III

1 August 2010 | San Diego, California, United States

Spintronics II

2 August 2009 | San Diego, California, United States

Spintronics

10 August 2008 | San Diego, California, United States

Quantum Sensing and Nanophotonic Devices IV

22 January 2007 | San Jose, California, United States

Quantum Sensing and Nanophotonic Devices III

23 January 2006 | San Jose, California, United States

Quantum Sensing and Nanophotonic Devices II

23 January 2005 | San Jose, California, United States

Quantum Sensing and Nanophotonic Devices

25 January 2004 | San Jose, CA, United States

Quantum Sensing: Evolution and Revolution from Past to Future

27 January 2003 | San Jose, CA, United States

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