Dr. Mihir Gupta Profile

Dr. Mihir Gupta

at imec

SPIE Involvement:

Author

Mihir Gupta is a researcher at imec in the Exploratory Patterning Materials group, working on material and metrology research for EUV lithography. He obtained his PhD in Physics from KU Leuven, Belgium in 2021, where he worked on FinFET based electrical sensing of bio-molecules (DNA and proteins). He obtained his master's degree in Microelectronics from Nanyang Technological University (NTU) - Technische Universität München (TUM), Singapore in 2015, and his bachelor's degree in Electronics Engineering from Rajasthan Technical University, India.

Proceedings Article | 9 April 2024 Presentation + Paper

Functional underlayers, surface priming, and multilayer stacks to improve dose and adhesion of EUV photoresists

Roberto Fallica, Lander Verstraete, Weizhong Huang, Mihir Gupta, Danilo De Simone, Si (Elly) Li, Daniel Sweat, Douglas Guerrero, Kodai Kato

Proceedings Volume 12957, 1295712 (2024) https://doi.org/10.1117/12.3009801

KEYWORDS: Extreme ultraviolet lithography, Photoresist materials, Adhesion, Etching, Semiconducting wafers, Extreme ultraviolet, Silicon, Line width roughness, Chemically amplified resists, Amorphous carbon

Read Abstract +

Proceedings Article | 9 April 2024 Presentation + Paper

Organic dry development rinse (O-DDR) process for spin-on MOR to prevent pattern collapse

Seonggil Heo, Seungjoo Baek, Mihir Gupta, Hyo Seon Suh, Kodai Kato, Satoshi Takeda, Wataru Shibayama, Rikimaru Sakamoto

Proceedings Volume 12957, 1295710 (2024) https://doi.org/10.1117/12.3011118

KEYWORDS: Semiconducting wafers, Windows, Bridges, Extreme ultraviolet lithography, Photoresist processing, Critical dimension metrology, Photoresist materials, Metal oxides, Image processing, Capillaries

Read Abstract +

Proceedings Article | 1 May 2023 Presentation + Paper

Scaled-down deposited underlayers for EUV lithography

Mihir Gupta, Joao Antunes Afonso, Philippe Bezard, Remi Vallat, Roberto Fallica, Hyo Seon Suh, Sandip Halder, Danilo De Simone, Zecheng Liu, Fanyong Ran, Hideaki Fukuda, Yiting Sun, David De Roest, Daniele Piumi

Proceedings Volume 12498, 124980R (2023) https://doi.org/10.1117/12.2660376

KEYWORDS: Film thickness, Extreme ultraviolet lithography, Etching, Adhesion, Line width roughness, Line edge roughness, Surface roughness, Lithography, Interfaces

Read Abstract +

Proceedings Article | 1 May 2023 Presentation + Paper

Mitigating stochastics in EUV lithography by directed self-assembly

L. Verstraete, Hyo Seon Suh, Julie Van Bel, Purnota Hannan Timi, Remi Vallat, Philippe Bezard, Jelle Vandereyken, Matteo Beggiato, Amir-Hossein Tamaddon, Christophe Beral, Waikin Li, Mihir Gupta, Roberto Fallica

Proceedings Volume 12497, 124970I (2023) https://doi.org/10.1117/12.2657939

KEYWORDS: Block copolymers, Extreme ultraviolet, Directed self assembly, Extreme ultraviolet lithography, Bridges, Etching

Read Abstract +

Proceedings Article | 30 April 2023 Presentation

Dry resist patterning readiness towards high-NA EUV lithography

Hyo Seon Suh, Danilo De Simone, Christophe Beral, Mihir Gupta, Nadia Vandenbroeck, Anuja De Silva, Ali Haider, Ching-Chung Huang, Mohand Brouri, Francesco Gullo, Shruti Jambaldinni, Benjamin Kam, Hicham Zaid, Elisseos Verveniotis, Samantha Tan, Tim Weidman, Jengyi Yu, Da Li, Jun Xue, Younghee Lee

Proceedings Volume 12498, 1249803 (2023) https://doi.org/10.1117/12.2661652

KEYWORDS: Optical lithography, Extreme ultraviolet lithography, Extreme ultraviolet, Photoresist processing, Materials processing, Interfaces

Read Abstract +

Proceedings Article | 26 May 2022 Presentation + Paper

Outlier analysis for understanding process variations and probable defects

Mihir Gupta, Paulina Rincon Delgadillo, Hyo Seon Suh, Sandip Halder, Mircea Dusa

Proceedings Volume 12053, 120530Q (2022) https://doi.org/10.1117/12.2616679

KEYWORDS: Critical dimension metrology, Statistical analysis, Scanning electron microscopy, Optical inspection, Materials processing, Inspection, Image processing, Metrology, Lithography

Read Abstract +

To understand extreme ultraviolet (EUV) lithography performance of various materials (resists, underlayers etc) or processes (bake, development etc.) in terms of process window (PW) and defectivity, we typically use e-beam based tools (e.g., CDSEM) or optical inspection and defect reviews. The optical inspections can scan large areas quickly to pick up potential defects but give little information about the defect’s morphology. The e-beam inspections provide us with metrology information (CD, PW etc.) and detailed defect characteristics, but is very slow. To connect this gap, i.e., to be able to make high-level projections about process window variations and probable defectivity while scanning small area quickly, we need an intermediate analysis methodology bridging optical inspection and CDSEM analysis. With this objective, we present a new data analysis methodology for understanding process variations and probabilities of developing defects, by performing statistical analysis of the local CD variations for line/spaces patterned using EUV lithography. The local CDs obtained from a CDSEM image are assumed to follow the normal distribution curve. The deviations from the distribution i.e., the outlier local CD data, represent potential bridge and break defects and can help identify the probabilities of obtaining these defects for a process, material, condition etc. The outlier counts are obtained by performing statistical hypothesis testing (e.g., generalized extreme studentized deviate test) of the local CDs. Additional metrics such as p-value of the Shapiro-Wilk hypothesis test for local CD distribution are also measured to quantify the degree of normality of the distribution. Using these metrics, we compared different resists, underlayers and L/S pitches to demonstrate the novel utility of this data analysis method in understanding process variations and finding probable defects. We also demonstrate the validity of this analysis method by correlating the obtained outlier count with the standardized line roughness measurements and defectivity counts.

Proceedings Article | 25 May 2022 Presentation + Paper

To bake or not to bake... : the impact of prebake in the EUV resist process

Ivan Pollentier, Ashish Rathore, Mihir Gupta, Danilo De Simone, Hyo Seon Suh

Proceedings Volume 12055, 1205507 (2022) https://doi.org/10.1117/12.2616094

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Photo decomposable quencher, Chemistry, Silicon, Photoresist processing, Photoresist materials

Read Abstract +

In photoresist processing a prebake is traditionally used after coating the photoresist on a wafer to drive off solvents in the resist, resulting in a more stable film. In comparison to other stages of the lithography process (e.g. the conditions of exposure and post-exposure events), limited attention is paid in the prebake optimization for the EUV application. In this work, investigation is done to clarify its role for the case of chemically amplified resists (CAR). Compared to the earlier DUV application, this resist is used at significantly smaller thicknesses and has a significantly different composition in terms of photo acid generator (PAG) and quencher types and concentration. In a first screening, a commercial CAR material – coated on Si – was investigated towards contrast changes at different prebake temperatures. It was found that lower temperature can result in adhesion failure when substrate conditions are not optimized for adhesion. With proper adhesion promotion however, it was found that prebake temperature could be lowered significantly or even omitted, without clear change in contrast. Using model resists in combination with residual gas analysis (RGA), it was found that the use of photo-decomposable quencher could be responsible for maintaining contrast to lower bake temperatures. In a second investigation, an assessment towards outgas risk was done when using resists at lower prebake temperatures in EUV scanner environment. Finally, the printability of commercial CAR was tested on the NXE3400 EUV scanner at different prebake temperatures. This was done by coating the CAR on two available underlayer materials: spin-on-glass and deposited underlayer. Results show that the prebake temperature could be reduced or even omitted without a clear deterioration in process window, line edge roughness and defectivity. It was found that proper choice of underlayer material could even improve slightly the printing performance at lower prebake condition.

Proceedings Article | 19 October 2021 Presentation + Paper

Printability and propagation of stochastic defects through a study of defects programmed on EUV mask

Poulomi Das, Alain Moussa, Christophe Beral, Mihir Gupta, Mohamed Saib, Sandip Halder, Anne Laure Charley, Philippe Leray

Proceedings Volume 11854, 118540Z (2021) https://doi.org/10.1117/12.2602034

KEYWORDS: Photomasks, Semiconducting wafers, Etching, Atomic force microscopy, Scanning electron microscopy, Bridges, Stochastic processes, Lithography, Extreme ultraviolet, Inspection

Read Abstract +

Showing 5 of 8 publications

Keywords/Phrases

Search In:

Publication Years