Dr. Tadashi Okumura Profile

Dr. Tadashi Okumura

at Hitachi Ltd

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Author

Publications (5)

Proceedings Article | 10 April 2024 Poster

Three-dimensional global uniformity control in plasma etcher using multi parameter profile characterization technique based on CD-SEM image

Makoto Satake, Chisaki Takubo, Tadashi Okumura, Kenji Yasui, Hitoshi Namai, Takahiro Kawasaki, Mayuka Osaki, Maki Tanaka

Proceedings Volume 12955, 129553K (2024) https://doi.org/10.1117/12.3011778

KEYWORDS: Plasma etching, Plasma, 3D image processing, Semiconducting wafers, Critical dimension metrology, Control systems, Temperature control, Semiconductors, Gallium arsenide, Field effect transistors

Proceedings Article | 27 February 2015 Paper

25 Gbps silicon photonics multi-mode fiber link with highly alignment tolerant vertically illuminated germanium photodiode

Tadashi Okumura, Yuki Wakayama, Yasunobu Matsuoka, Katsuya Oda, Misuzu Sagawa, Takashi Takemoto, Etsuko Nomoto, Hideo Arimoto, Shigehisa Tanaka

Proceedings Volume 9367, 93670Y (2015) https://doi.org/10.1117/12.2076010

KEYWORDS: Photodiodes, Germanium, Silicon, Silicon photonics, Tolerancing, Receivers, Optical alignment, Photonics, Multimode fibers, Single mode fibers

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Proceedings Article | 19 February 2014 Paper

Germanium light-emitting diodes on silicon for very-short-reach interconnect

Misuzu Sagawa, Katsuya Oda, Kazuki Tani, Yuji Suwa, Jun-ichi Kasai, Tadashi Okumura, Shin-ichi Saito, Tatemi Ido

Proceedings Volume 9010, 90100I (2014) https://doi.org/10.1117/12.2044830

KEYWORDS: Germanium, Silicon, Electroluminescence, Light sources, Electrons, Crystals, Doping, Light emitting diodes, Optical components, Absorption

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Proceedings Article | 11 February 2008 Paper

Length dependences of in-plane polarizations anisotropy in GaInAsP/InP quantum-wire structures fabricated by dry etching and regrowth process

D. Plumwongrot, Y. Tamura, Y. Nishimoto, M. Kurokawa, T. Okumura, T. Maruyama, N. Nishiyama, S. Arai

Proceedings Volume 6902, 690205 (2008) https://doi.org/10.1117/12.762201

KEYWORDS: Polarization, Anisotropy, Polymethylmethacrylate, Scanning electron microscopy, Quantum wells, Dry etching, Semiconducting wafers, Lithography, Scattering, Luminescence

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Proceedings Article | 29 January 2008 Paper

Reduction of RIE induced damage of GaInAsP/InP DQW lasers fabricated by 2-step growth

D. Plumwongrot, M. Kurokawa, T. Okumura, Y. Nishimoto, T. Maruyama, N. Nishiyama, S. Arai

Proceedings Volume 6909, 69090C (2008) https://doi.org/10.1117/12.764538

KEYWORDS: Semiconducting wafers, Quantum wells, Reactive ion etching, Plasma, Silica, Photomasks, Wafer-level optics, Electroluminescence, Quantum efficiency, Optical properties

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