Dr. Moshe E. Preil Profile

Dr. Moshe E. Preil

Sr Technical Manager Product Strategy

SPIE Involvement:

Conference Program Committee | Editorial Board Member: Journal of Micro/Nanolithography, MEMS, and MOEMS | Editorial Board Member: Journal of Micro/Nanopatterning, Materials, and Metrology | Author | Editor

Publications (34)

Proceedings Article | 18 October 2024 Presentation + Paper

Presentation + Paper

Self-supervised deep image restoration for x-ray computed laminographic tomography

Shiqi Xu, Susan Candell, Tom Case, Aksel Göhnermeier, Jeffrey Irwin, Kamyar Majlan, Moshe Preil, Johannes Ruoff, Moran Xu, Faguo Yang, Matthew Andrew

Proceedings Volume 13152, 131520T (2024) https://doi.org/10.1117/12.3028278

KEYWORDS: Image restoration, Computed tomography, X-ray imaging, Inspection, X-ray computed tomography, Denoising, CT reconstruction

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SPIE Journal Paper | 20 February 2024 Open Access

Open Access

Special Section Guest Editorial: Patterning for Advanced Packaging

Ken-Ichiro Mori, Moshe Preil

JM3, Vol. 23, Issue 01, 011001, (February 2024) https://doi.org/10.1117/12.10.1117/1.JMM.23.1.011001

KEYWORDS: Advanced packaging, Optical lithography, Front end of line, Packaging, Reliability, Electronic design automation, Chip manufacturing, Yield improvement, Semiconductors, Photoresist processing

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Proceedings Article | 27 June 2019 Paper

Paper

Open issues in mask technology as EUV enters high volume manufacturing

Moshe Preil, James Westphal

Proceedings Volume 11178, 111780C (2019) https://doi.org/10.1117/12.2536308

KEYWORDS: Reticles, Extreme ultraviolet, Semiconducting wafers, Photomasks, Inspection, Pellicles, Scanners, Stochastic processes, Line edge roughness, Critical dimension metrology

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Proceedings Article | 16 October 2017 Paper

Paper

EUV reticle print verification with advanced broadband optical wafer inspection and e-Beam review systems

Ravikumar Sanapala, Andrew Cross, Moshe Preil, Jin Qian, Shishir Suman, Vidyasagar Anantha, Kaushik Sah, Scott Eitapence, Danilo De Simone, Dieter Van den Heuvel, Philippe Foubert

Proceedings Volume 10451, 104510L (2017) https://doi.org/10.1117/12.2281632

KEYWORDS: Semiconducting wafers, Photomasks, Inspection, Wafer-level optics, Extreme ultraviolet, Reticles, Optical inspection, Oxides, Wafer inspection, Signal to noise ratio

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SPIE Journal Paper | 29 September 2016

Directed self-assembly compliant flow with immersion lithography: from material to design and patterning

Yuansheng Ma, Yan Wang, James Word, Junjiang Lei, Joydeep Mitra, Juan Andres Torres, Le Hong, Germain Fenger, Daman Khaira, Moshe Preil, Jongwook Kye, Harry Levinson

JM3, Vol. 15, Issue 03, 031610, (September 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.3.031610

KEYWORDS: Directed self assembly, Lens design, Optical lithography, Immersion lithography, Photomasks, Neck, Lithography, Critical dimension metrology, Visualization, Optical proximity correction

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Proceedings Article | 28 March 2016 Open Access

Open Access

Paper

Patterning challenges in the sub-10 nm era

Moshe Preil

Proceedings Volume 9780, 978002 (2016) https://doi.org/10.1117/12.2222256

KEYWORDS: Optical lithography, Etching, Lithography, Metrology, Data modeling, Photomasks, Electron beam lithography, Semiconducting wafers, 3D modeling, Tolerancing

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Proceedings Article | 22 March 2016 Paper

Paper

Directed Self Assembly (DSA) compliant flow with immersion lithography: from material to design and patterning

Yuansheng Ma, Yan Wang, James Word, Junjiang Lei, Joydeep Mitra, J. Andres Torres, Le Hong, Germain Fenger, Daman Khaira, Moshe Preil, Lei Yuan, Jongwook Kye, Harry Levinson

Proceedings Volume 9777, 97770N (2016) https://doi.org/10.1117/12.2219505

KEYWORDS: Optical lithography, Semiconducting wafers, Lithography, Directed self assembly, Immersion lithography, Extreme ultraviolet, Optical resolution, Neck, Modulation, Photomasks, Lens design, Ions, Neodymium, Visualization, Code division multiplexing

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SPIE Journal Paper | 14 March 2016

Optical critical dimension metrology for directed self-assembly assisted contact hole shrink

Dhairya Dixit, Avery Green, Erik Hosler, Vimal Kamineni, Moshe Preil, Nick Keller, Joseph Race, Jun Sung Chun, Michael O’Sullivan, Prasanna Khare, Warren Montgomery, Alain Diebold

JM3, Vol. 15, Issue 01, 014004, (March 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.1.014004

KEYWORDS: Directed self assembly, Critical dimension metrology, Scatterometry, Polymethylmethacrylate, Optical components, Picosecond phenomena, Optical simulations, Chemical elements, Optical lithography, Ellipsometry

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SPIE Journal Paper | 3 August 2015 Open Access

Open Access

Sensitivity analysis and line edge roughness determination of 28-nm pitch silicon fins using Mueller matrix spectroscopic ellipsometry-based optical critical dimension metrology

Dhairya Dixit, Samuel O’Mullane, Sravan Sunkoju, Abhishek Gottipati, Erik Hosler, Vimal Kamineni, Moshe Preil, Nick Keller, Joseph Race, Gangadhara Raja Muthinti, Alain Diebold

JM3, Vol. 14, Issue 03, 031208, (August 2015) https://doi.org/10.1117/12.10.1117/1.JMM.14.3.031208

KEYWORDS: Line edge roughness, Silicon, Scatterometry, Data modeling, Optical components, Scanning electron microscopy, Picosecond phenomena, Chemical elements, Line width roughness, Optical properties

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SPIE Journal Paper | 10 April 2015 Open Access

Open Access

Metrology for block copolymer directed self-assembly structures using Mueller matrix-based scatterometry

Dhairya Dixit, Vimal Kamineni, Richard Farrell, Erik Hosler, Moshe Preil, Joseph Race, Brennan Peterson, Alain Diebold

JM3, Vol. 14, Issue 02, 021102, (April 2015) https://doi.org/10.1117/12.10.1117/1.JMM.14.2.021102

KEYWORDS: Silicon, Picosecond phenomena, Scatterometry, Anisotropy, Semiconducting wafers, Data modeling, Metrology, Optical lithography, Chemical elements, Directed self assembly

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Proceedings Article | 10 April 2015 Paper

Paper

Silicon fin line edge roughness determination and sensitivity analysis by Mueller matrix spectroscopic ellipsometry based scatterometry

Dhairya Dixit, Samuel O'Mullane, Sravan Sunkoju, Erik Hosler, Vimal Kamineni, Moshe Preil, Nick Keller, Joseph Race, Gangadhara Raja Muthinti, Alain Diebold

Proceedings Volume 9424, 94242P (2015) https://doi.org/10.1117/12.2185543

KEYWORDS: Line edge roughness, Silicon, Scatterometry, Data modeling, Optical components, Spatial frequencies, Chemical elements, Optical properties, Inverse optics, Critical dimension metrology

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Proceedings Article | 19 March 2015 Paper

Paper

Optical CD metrology for directed self-assembly assisted contact hole shrink process

Dhairya Dixit, Erik Hosler, Moshe Preil, Nick Keller, Joseph Race, Jun Sung Chun, Michael O’Sullivan, M. Warren Montgomery, Alain Diebold

Proceedings Volume 9424, 94240T (2015) https://doi.org/10.1117/12.2085054

KEYWORDS: Scatterometry, Polymethylmethacrylate, Critical dimension metrology, Optical components, Chemical elements, Optical simulations, Inverse optics, Ellipsometry, Optical lithography, Directed self assembly

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Proceedings Article | 13 March 2015 Paper

Paper

Considerations for a free-electron laser-based extreme-ultraviolet lithography program

Erik Hosler, Obert Wood, William Barletta, Pawitter Mangat, Moshe Preil

Proceedings Volume 9422, 94220D (2015) https://doi.org/10.1117/12.2085538

KEYWORDS: Free electron lasers, Extreme ultraviolet lithography, Extreme ultraviolet, Electron beams, Lithography, Scanners, Prototyping, Light sources, Cryogenics, X-rays

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Proceedings Article | 2 April 2014 Paper

Paper

Metrology for directed self-assembly block lithography using optical scatterometry

Dhairya Dixit, Vimal Kamineni, Richard Farrell, Erik Hosler, Moshe Preil, Joseph Race, Brennan Peterson, Alain Diebold

Proceedings Volume 9050, 90500N (2014) https://doi.org/10.1117/12.2047111

KEYWORDS: Scatterometry, Anisotropy, Metrology, Chemical elements, Picosecond phenomena, 3D modeling, Data modeling, Optical lithography, Optical properties, Directed self assembly

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Proceedings Article | 28 March 2014 Paper

Paper

Dual frequency mid-gap capacitively coupled plasma (m-CCP) for conventional and DSA patterning at 10nm node and beyond

Nihar Mohanty, Akiteru Ko, Christopher Cole, Vinayak Rastogi, Kaushik Kumar, Gerard Schmid, Richard Farrell, Todd Ryan, Erik Hosler, Ji Xu, Moshe Preil

Proceedings Volume 9054, 90540R (2014) https://doi.org/10.1117/12.2048320

KEYWORDS: Etching, Optical lithography, Plasma, Semiconducting wafers, Double patterning technology, Lithography, Photons, Back end of line, Metals, Directed self assembly

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Proceedings Article | 28 March 2014 Paper

Paper

Simulations of spatial DSA morphology, DSA-aware assist features and block copolymer-homopolymer blends

Azat Latypov, Tamer Coskun, Grant Garner, Moshe Preil, Gerard Schmid, Ji Xu, Yi Zou

Proceedings Volume 9049, 904908 (2014) https://doi.org/10.1117/12.2046082

KEYWORDS: Monte Carlo methods, Atrial fibrillation, Etching, Optical lithography, Polymers, Molecules, Polymethylmethacrylate, Roentgenium, Computer simulations, Directed self assembly

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Proceedings Article | 27 March 2014 Paper

Paper

Manufacturability considerations for DSA

Richard Farrell, Erik Hosler, Gerard Schmid, Ji Xu, Moshe Preil, Vinayak Rastogi, Nihar Mohanty, Kaushik Kumar, Michael Cicoria, David Hetzer, Anton DeVilliers

Proceedings Volume 9051, 90510Z (2014) https://doi.org/10.1117/12.2048396

KEYWORDS: Polymethylmethacrylate, Optical lithography, Photoresist materials, Line edge roughness, Etching, Line width roughness, Picosecond phenomena, Scanning electron microscopy, Annealing, Directed self assembly

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Proceedings Article | 26 March 2013 Paper

Paper

Fabrication of 28nm pitch Si fins with DSA lithography

Gerard Schmid, Richard Farrell, Ji Xu, Chanro Park, Moshe Preil, Vidhya Chakrapani, Nihar Mohanty, Akiteru Ko, Michael Cicoria, David Hetzer, Mark Somervell, Benjamen Rathsack

Proceedings Volume 8680, 86801F (2013) https://doi.org/10.1117/12.2011607

KEYWORDS: Optical lithography, Etching, Silicon, Photoresist materials, Finite element methods, Picosecond phenomena, Coating, Polymethylmethacrylate, Lithography, Directed self assembly

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Proceedings Article | 26 March 2013 Paper

Paper

Exploration of the directed self-assembly based nano-fabrication design space using computational simulations

Azat Latypov, Moshe Preil, Gerard Schmid, Ji Xu, He Yi, Kenji Yoshimoto, Yi Zou

Proceedings Volume 8680, 868013 (2013) https://doi.org/10.1117/12.2011238

KEYWORDS: Monte Carlo methods, Optical proximity correction, Computer simulations, Polymers, Annealing, Polymethylmethacrylate, Deep ultraviolet, Integrated circuits, Nanofabrication, Directed self assembly

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Proceedings Article | 8 March 2012 Open Access

Open Access

Paper

Factors that determine the optimum dose for sub-20nm resist systems: DUV, EUV, and e-beam options

Moshe Preil

Proceedings Volume 8325, 832503 (2012) https://doi.org/10.1117/12.920024

KEYWORDS: Extreme ultraviolet, Photons, Deep ultraviolet, Line edge roughness, Lithography, Electron beam direct write lithography, Semiconducting wafers, Stochastic processes, Electrons, Extreme ultraviolet lithography

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SPIE Journal Paper | 1 October 2010 Open Access

Open Access

Special Section Guest Editorial: Metrology

Moshe Preil, Shaunee Cheng

JM3, Vol. 9, Issue 04, 041301, (October 2010) https://doi.org/10.1117/12.10.1117/1.3540417

KEYWORDS: Metrology, Critical dimension metrology, Overlay metrology, Semiconductors, Tolerancing, Silicon, Chemical species, Lithography, Calibration, Standards development

Proceedings Article | 30 July 2002 Paper

Paper

Assessment of OPC effectiveness using two-dimensional metrics

Vincent Wiaux, Vicky Philipsen, Rik Jonckheere, Geert Vandenberghe, Staf Verhaegen, Thomas Hoffmann, Kurt Ronse, William Howard, Wilhelm Maurer, Moshe Preil

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474588

KEYWORDS: Reticles, Optical proximity correction, Photomasks, Scanning electron microscopy, Semiconducting wafers, Critical dimension metrology, Optical lithography, Metrology, Printing, Logic

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A complete evaluation of the optical proximity effects (OPE) and of their corrections (OPC) requires a quantitative description of two-dimensional (2D) parameters, both at resist- and at reticle-level. Because the 2D behaviour at line-ends and at line-corners can become a limiting factor for the yield, it should be taken into account when characterising a process, just as the CD- and pitch-linearity are already kept under control. This implies the measurement of 2D-metrics in a precise way. We used an SEM Image Analysis tool (ProDATA SIAM) to define and measure various OPC-relevant metrics for a C013 process. For the METAL (M1) process, we show that the overlap between line-ends of M1-trenches and underlying nominal contacts is a relevant metric to describe the effectiveness of hammerheads. Moreover, it is an interesting metric to combine with the CD process window. For the GATE process, we demonstrate that for a given set of metrics there is a degree of OPC aggressiveness beyond which it is not worth to go. We considered both line-end shortening (LES) and corner rounding affecting the poly linewidth close to a contact pad, and this on various logic circuits having received different degrees of fragmentation. Finally the knowledge of the actual line-end contour on the reticle allows one to simulate separately the printing effect of that area loss at reticle line-ends. The area loss measured by comparing the extracted contour to the target one is regarded as a combination of pull-back and area loss at corners. For our C013 gate process, and for the 130nm lines at a 1:1.25 duty cycle, those two parameters contribute together to approximetely 40% of the measured LES in the resist. This fact raises the question of specifications on 2D reticle parameters. We also find a linear correlation between the area loss at reticle line-end corners and the corresponding increase of LES on the wafer, which suggests a way towards putting specifications on the reticle line-ends.

Proceedings Article | 22 August 2001 Paper

Paper

Automated method for overlay sample plan optimization based on spatial variation modeling

Xuemei Chen, Moshe Preil, Mathilde Le Goff-Dussable, Mireille Maenhoudt

Proceedings Volume 4344, (2001) https://doi.org/10.1117/12.436749

KEYWORDS: Error analysis, Semiconducting wafers, Chemical mechanical planarization, Overlay metrology, Statistical analysis, Tolerancing, Oxides, Statistical modeling, Metals, Data modeling

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Proceedings Article | 22 August 2001 Paper

Paper

Characterization of optical proximity correction features

John Allgair, Michelle Ivy, Kevin Lucas, John Sturtevant, Richard Elliott, Chris Mack, Craig MacNaughton, John Miller, Mike Pochkowski, Moshe Preil, John Robinson, Frank Santos

Proceedings Volume 4344, (2001) https://doi.org/10.1117/12.436743

KEYWORDS: Optical proximity correction, Reticles, Photomasks, Lithography, Scanning electron microscopy, Critical dimension metrology, Etching, Semiconducting wafers, Tolerancing, Optical lithography

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Proceedings Article | 26 April 2001 Paper

Paper

Measurement and analysis of reticle and wafer-level contributions to total CD variation

Moshe Preil, Chris Mack

Proceedings Volume 4404, (2001) https://doi.org/10.1117/12.425200

KEYWORDS: Reticles, Semiconducting wafers, Photomasks, Critical dimension metrology, Lithography, Optical proximity correction, Scanning electron microscopy, Cadmium, Wafer-level optics, Error analysis

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Proceedings Article | 20 October 2000 Paper

Paper

Measurement and analysis of reticle and wafer level contributions to total CD variation

Moshe Preil, Chris Mack

Proceedings Volume 4226, (2000) https://doi.org/10.1117/12.404840

KEYWORDS: Reticles, Semiconducting wafers, Photomasks, Critical dimension metrology, Lithography, Error analysis, Inspection, Calibration, Wafer-level optics, Scanning electron microscopy

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Proceedings Article | 2 June 2000 Paper

Paper

Sampling plan optimization for detection of lithography and etch CD process excursions

Richard Elliott, Raman Nurani, Sung Jin Lee, Luis Ortiz, Moshe Preil, J. Shanthikumar, Trina Riley, Greg Goodwin

Proceedings Volume 3998, (2000) https://doi.org/10.1117/12.386461

KEYWORDS: Semiconducting wafers, Etching, Critical dimension metrology, Lithography, Statistical analysis, Metrology, Chlorine, Statistical modeling, Process control, Tolerancing

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Proceedings Article | 26 July 1999 Paper

Paper

Business dynamics of lithography at very low k1 factors

Sam Harrell, Moshe Preil

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354334

KEYWORDS: Lithography, Photomasks, Semiconductors, Reticles, Printing, Semiconducting wafers, Metals, Optical lithography, Systems engineering, Error analysis

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Proceedings Article | 14 June 1999 Paper

Paper

Factors that determine the optimum reduction factor for wafer steppers

Harry Levinson, Paul Ackmann, Moshe Preil, William Rericha

Proceedings Volume 3677, (1999) https://doi.org/10.1117/12.350834

KEYWORDS: Reticles, Semiconducting wafers, Photomasks, Inspection, Lithography, Manufacturing, Lenses, Optical lithography, Critical dimension metrology, Optical proximity correction

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Proceedings Article | 14 June 1999 Paper

Paper

New approach to correlating overlay and yield

Moshe Preil, John McCormack

Proceedings Volume 3677, (1999) https://doi.org/10.1117/12.350808

KEYWORDS: Semiconducting wafers, Overlay metrology, Error analysis, Tolerancing, Statistical analysis, Signal attenuation, Data modeling, Manufacturing, Critical dimension metrology, Reticles

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Proceedings Article | 7 July 1997 Paper

Paper

Improving the accuracy of overlay measurements through reduction in tool- and wafer-induced shifts

Moshe Preil, Bert Plambeck, Yoram Uziel, Hao Zhou, Matthew Melvin

Proceedings Volume 3050, (1997) https://doi.org/10.1117/12.275963

KEYWORDS: Semiconducting wafers, Overlay metrology, Calibration, Silicon, Metals, Error analysis, Metrology, Wafer-level optics, Thallium, Chemical mechanical planarization

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Proceedings Article | 7 July 1997 Paper

Paper

Minimization of total overlay errors on product wafers using an advanced optimization scheme

Harry Levinson, Moshe Preil, Patrick Lord

Proceedings Volume 3051, (1997) https://doi.org/10.1117/12.275996

KEYWORDS: Error analysis, Semiconducting wafers, Reticles, Overlay metrology, Optical lithography, Control systems, Optical alignment, Lead, Statistical analysis, Process control

Read Abstract +

The matching of wafer steppers is accomplished typically by patterning two successive layers, using different steppers of interest for each layer, and measuring the overlay at many points in the exposure field. Matching is considered to be optimized when some metric, such the sum-of-squares of overlay errors, is minimized over all measured points within the field. This is to be contrasted to the situation which arises during the in-line measurement of overlay errors in production, where a far more limited sampling of points is involved. There are several consequences to limited sampling. Adjustable intrafield overlay components, such as magnification, may appear to vary up to several parts-per- million as a consequence of varying chip size. These variations are substantially larger than the normal variations of these components for fixed field sizes, and so have significant consequences for the application of statistical methodologies to the control of overlay components. The width of the distribution of overlay errors across the field may typically increase between 10 to 20 nm (3(sigma) ), with even larger increases in mean shifts, all varying with field size. Reticles may also introduce similar variations, both random and systematic. Reticle beam-writer errors lead to systematic intrafield errors, particularly asymmetric field magnification and field skew. Steppers may compensate for these systematic reticle errors, and step- and-scan systems are more effective at this compensation than step-and-repeat machines. For steppers which have process dependent alignment, this compensation must be determined on products, which leads back to the problems associated with limited sampling. Correction for the overlay errors induced by limited sampling may be accomplished by look-up tables incorporated into the overlay analysis software. For each pair of steppers and each sampling plan, corrections can be applied at each measurement point in order to bring the full field and limited sampling plans into consistency. This will lead to a true minimization of overlay on product and will stabilize statistical process control of overlay components.

Proceedings Article | 17 May 1994 Paper

Paper

Minimization of total overlay errors when matching nonconcentric exposure fields

Moshe Preil, Terry Manchester, Anna Maria Minvielle, Robert Chung

Proceedings Volume 2197, (1994) https://doi.org/10.1117/12.175466

KEYWORDS: Distortion, Overlay metrology, Lenses, Semiconducting wafers, Manufacturing, Reticles, Data modeling, Optical alignment, Lithography, Integrated circuits

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Proceedings Article | 1 July 1991 Open Access

Open Access

Paper

Phase-shift mask technology: requirements for e-beam mask lithography

Steven Dunbrack, Andrew Muray, Charles Sauer, Richard Lozes, John Nistler, William Arnold, David Kyser, Anna Maria Minvielle, Moshe Preil, Bhanwar Singh, Michael Templeton

Proceedings Volume 1464, (1991) https://doi.org/10.1117/12.44444

KEYWORDS: Photomasks, Inspection, Reticles, Integrated circuits, Process control, Metrology, Electron beam lithography, Phase shifts, Overlay metrology, Photomicroscopy

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Showing 5 of 34 publications

Proceedings Volume Editor (2)

SPIE Conference Volume | 16 October 2020

Photomask Technology 2020

SPIE Conference Volume | 4 November 2019

Photomask Technology 2019

Conference Committee Involvement (17)

Optical and EUV Nanolithography XXXVIII

24 February 2025 | San Jose, California, United States

Optical and EUV Nanolithography XXXVII

26 February 2024 | San Jose, California, United States

Optical and EUV Nanolithography XXXVI

27 February 2023 | San Jose, California, United States

Optical and EUV Nanolithography XXXV

25 April 2022 | San Jose, California, United States

Photomask Technology

27 September 2021 | Online Only, United States

International Conference on Extreme Ultraviolet Lithography 2021

27 September 2021 | Online Only, United States

Extreme Ultraviolet (EUV) Lithography XII

22 February 2021 | Online Only, California, United States

International Conference on Extreme Ultraviolet Lithography 2020

21 September 2020 | Online Only, California, United States

Photomask Technology

21 September 2020 | Online Only, California, United States

Extreme Ultraviolet (EUV) Lithography XI

24 February 2020 | San Jose, California, United States

International Conference on Extreme Ultraviolet Lithography 2019

16 September 2019 | Monterey, California, United States

Photomask Technology

16 September 2019 | Monterey, California, United States

Extreme Ultraviolet (EUV) Lithography X

25 February 2019 | San Jose, California, United States

Photomask Technology

17 September 2018 | Monterey, California, United States

Extreme Ultraviolet (EUV) Lithography IX

26 February 2018 | San Jose, California, United States

Photomask Technology

11 September 2017 | Monterey, California, United States

Emerging Patterning Technologies 2017

27 February 2017 | San Jose, California, United States

Showing 5 of 17 Conference Committees

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