Mr. Yutaka Kodera Profile

Yutaka Kodera

Engineer at Toppan Printing Co Ltd

SPIE Involvement:

Author

Publications (28)

Proceedings Article | 27 June 2019 Paper

Paper

The study of relationship between defect sensitivity and inspectability on EUV masks with 19x nm mask inspection

Masashi Yonetani, Karen Badger, Jed Rankin, Shinji Akima, Yusuke Toda, Itaru Yoshida, Masayuki Kagawa, Takeshi Isogawa, Yutaka Kodera, Jan Heumann, Anka Birnstein

Proceedings Volume 11178, 111780D (2019) https://doi.org/10.1117/12.2537430

KEYWORDS: Inspection, Extreme ultraviolet, Defect inspection, Photomasks, Opacity, Optical inspection, Signal detection, Critical dimension metrology, Extreme ultraviolet lithography, Defect detection

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Proceedings Article | 12 October 2018 Presentation

Presentation

Minimizing tone reversal during 19x nm mask inspection: PMJ18 Best Paper (Conference Presentation)

Masashi Yonetani, Kazunori Seki, Karen Badger, Anka Birnstein, Jan Heumann, Takeshi Isogawa, Toshio Konishi, Yutaka Kodera

Proceedings Volume 10810, 1081007 (2018) https://doi.org/10.1117/12.2503808

KEYWORDS: Inspection, Photomasks, Extreme ultraviolet, EUV optics, Extreme ultraviolet lithography, Lithography, Semiconducting wafers, Wafer-level optics, Defect detection, Optical inspection

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Proceedings Article | 12 June 2018 Paper

Paper

Minimizing "Tone Reversal" during 19x nm mask inspection

Kazunori Seki, Karen Badger, Masashi Yonetani, Anka Birnstein, Jan Heumann, Takeshi Isogawa, Toshio Konishi, Yutaka Kodera

Proceedings Volume 10807, 108070D (2018) https://doi.org/10.1117/12.2502006

KEYWORDS: Inspection, Photomasks, Extreme ultraviolet, Polarization, Opacity, Defect detection, EUV optics, Deep ultraviolet, Defect inspection, Critical dimension metrology

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Proceedings Article | 12 June 2018 Paper

Paper

EUV mask with advanced hybrid black border suppressing EUV and DUV OOB light reflection

Genta Watanabe, Norihito Fukugami, Toru Komizo, Yutaka Kodera, Toshio Konishi

Proceedings Volume 10807, 108070N (2018) https://doi.org/10.1117/12.2501999

KEYWORDS: Extreme ultraviolet, Reflectivity, Photomasks, Deep ultraviolet, Semiconducting wafers, Reflection, Optical testing, Extreme ultraviolet lithography, Manufacturing, Atomic force microscopy

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EUV lithography is expected to be the most promising technology for semiconductor device manufacturing of the 7nm node and beyond. The EUV mask is a key element in the lithographic scanner optical path. The image border is a pattern free dark area around the die on the photomask serving as transition area between the parts of the mask that is shielded from the exposure light by the Reticle Masking (REMA) blades and the die. When printing a die at dense spacing on an EUV scanner, the reflection from the image border overlaps edges of neighboring dies, affecting CD and contrast in this area. This is related to the fact that EUV absorber stack reflects 1-3% of actinic EUV light. To reduce this effect several types of image border with reduced EUV light reflectance (<0.05%) have been proposed; such an image border is referred to as a black border (BB). In particular, an etched multilayer type black border was developed; it was demonstrated that CD impact at the edge of a die is strongly reduced with this type of the black border. However, wafer printing result still showed some CD change in the die influenced by the black border reflection. It was proven that the CD change was caused by DUV Out Of Band (OOB) light which is emitted from the EUV light source. In our previous study, a new types of multilayer etched BB called ‘Hybrid Black Border’ (HBB) had been developed and showed a good potential for DUV light suppression. OOB light reflection on HBB is ~3x lower than that of normal BB. Imaging performance was also demonstrated on NXE:3300 scanner system for N10 imaging structures of 16nm dense lines and 20nm isolated spaces. These results were compared to the imaging results obtained for a mask with the normal BB and 3x improvement was achieved; less than 0.2 nm CD changes were observed in the corners of the die. However, OOB light reflectance suppression was still not enough in short wavelength. In this study, we focused on OOB light reflectance reduction in short wavelength, and we developed a new HBB called ‘Advanced HBB’. We measured the OOB light reflectance of Advanced HBB by synchrotron radiation facility at PTB (Physikalisch- Technische Bundesanstalt, Germany). These results were compared to the results obtained from previous HBB. Then Advanced HBB achieved over 50% OOB light reflectance improvement in average wavelength 100nm to 270nm. Imaging performance also simulated in the edges and corners of the die. The CD-drop is expected to be more improved for Advanced HBB than previous HBB. As a result, it is expected the implementation of the Advanced HBB will help to mitigate the effects of possible increases of OOB light in the future higher power EUV sources.

Proceedings Article | 10 May 2016 Paper

Paper

Novel EUV mask black border suppressing EUV and DUV OoB light reflection

Shin Ito, Yutaka Kodera, Norihito Fukugami, Toru Komizo, Shingo Maruyama, Genta Watanabe, Itaru Yoshida, Jun Kotani, Toshio Konishi, Takashi Haraguchi

Proceedings Volume 9984, 99840O (2016) https://doi.org/10.1117/12.2242624

KEYWORDS: Extreme ultraviolet, Photomasks, Deep ultraviolet, Extreme ultraviolet lithography, Reflectivity, Semiconducting wafers, Neodymium, Reflection, Ultraviolet radiation, Manufacturing

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EUV lithography is the most promising technology for semiconductor device manufacturing of the 10nm node and beyond. The image border is a pattern free dark area around the die on the photomask serving as transition area between the parts of the mask that is shielded from the exposure light by the Reticle Masking (REMA) blades and the die. When printing a die at dense spacing on an EUV scanner, the reflection from the image border overlaps edges of neighboring dies, affecting CD and contrast in this area. This is related to the fact that EUV absorber stack reflects 1-3% of actinic EUV light. To reduce this effect several types of image border with reduced EUV reflectance (<0.05%) have been proposed; such an image border is referred to as a black border. In particular, an etched multilayer type black border was developed; it was demonstrated that CD impact at the edge of a die is strongly reduced with this type of the black border (BB). However, wafer printing result still showed some CD change in the die influenced by the black border reflection. It was proven that the CD shift was caused by DUV Out of Band (OOB) light from the EUV light source. New types of a multilayer etched BB were evaluated and showed a good potential for DUV light suppression. In this study, a novel BB called ‘Hybrid Black Border’ (HBB) has been developed to eliminate EUV and DUV OOB light reflection by applying optical design technique and special micro-fabrication technique. A new test mask with HBB is fabricated without any degradation of mask quality according to the result of CD performance in the main pattern, defectivity and cleaning durability. The imaging performance for N10 imaging structures is demonstrated on NXE:3300B in collaboration with ASML. This result is compared to the imaging results obtained for a mask with the earlier developed BB, and HBB has achieved ~3x improvement; less than 0.2 nm CD changes are observed in the corners of the die. A CD uniformity budget including impact of OOB light in the die edge area is evaluated which shows that the OOB impact from HBB becomes comparable with other CDU contributors in this area. Finally, we state that HBB is a promising technology allowing for CD control at die edges.

Proceedings Article | 18 March 2016 Paper

Paper

Novel EUV mask black border and its impact on wafer imaging

Yutaka Kodera, Norihito Fukugami, Toru Komizo, Genta Watanabe, Shin Ito, Itaru Yoshida, Shingo Maruyama, Jun Kotani, Toshio Konishi, Takashi Haraguchi

Proceedings Volume 9776, 977615 (2016) https://doi.org/10.1117/12.2218942

KEYWORDS: Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Scanners, Deep ultraviolet, Imaging systems, Semiconducting wafers, Reflectivity, Printing, Semiconductor manufacturing, Reflection, Manufacturing

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SPIE Journal Paper | 1 February 2016

Printability of buried extreme ultraviolet lithography photomask defects

Kazunori Seki, Takeshi Isogawa, Masayuki Kagawa, Shinji Akima, Yutaka Kodera, Karen Badger, Zhengqing John Qi, Mark Lawliss, Jed Rankin, Ravi Bonam

JM3, Vol. 15, Issue 02, 021004, (February 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.2.021004

KEYWORDS: Inspection, Photomasks, Semiconducting wafers, Defect detection, Scanning electron microscopy, Extreme ultraviolet lithography, Wafer inspection, Multilayers, Visibility, Overlay metrology

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Proceedings Article | 9 July 2015 Paper

Paper

Defectivity evaluation of EUV reticles with etched multilayer image border by wafer printing analysis

Rik Jonckheere, Erik Verduijn, Genta Watanabe, Norihito Fukugami, Yo Sakata, Yutaka Kodera, Emily Gallagher

Proceedings Volume 9658, 96580H (2015) https://doi.org/10.1117/12.2197682

KEYWORDS: Semiconducting wafers, Photomasks, Extreme ultraviolet, Reticles, Extreme ultraviolet lithography, Reflectivity, Scanning electron microscopy, Printing, Scanners, Opacity

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Proceedings Article | 9 July 2015 Paper

Paper

ENDEAVOUR to understand EUV buried defect printability

Kazunori Seki, Takeshi Isogawa, Masayuki Kagawa, Shinji Akima, Yutaka Kodera, Karen Badger, Zhengqing John Qi, Mark Lawliss, Jed Rankin, Ravi Bonam

Proceedings Volume 9658, 96580G (2015) https://doi.org/10.1117/12.2197763

KEYWORDS: Inspection, Semiconducting wafers, Photomasks, Scanning electron microscopy, Defect detection, Phase contrast, Extreme ultraviolet, Optical lithography, Visibility, Overlay metrology

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Proceedings Article | 17 October 2014 Paper

Paper

Black border, mask 3D effects: covering challenges of EUV mask architecture for 22nm node and beyond

Natalia Davydova, Eelco van Setten, Robert de Kruif, Brid Connolly, Norihito Fukugami, Yutaka Kodera, Hiroaki Morimoto, Yo Sakata, Jun Kotani, Shinpei Kondo, Tomohiro Imoto, Haiko Rolff, Albrecht Ullrich, Ramasubramanian Kottumakulal Jaganatharaja, Ad Lammers, Dorothe Oorschot, Cheuk-Wah Man, Guido Schiffelers, Joep van Dijk

Proceedings Volume 9231, 923102 (2014) https://doi.org/10.1117/12.2066299

KEYWORDS: Deep ultraviolet, Reflectivity, Extreme ultraviolet, Photomasks, Reticles, Scanners, Aluminum, Extreme ultraviolet lithography, Atomic force microscopy, Semiconducting wafers

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Proceedings Article | 28 July 2014 Paper

Paper

Achievements and challenges of EUV mask imaging

Natalia Davydova, Eelco van Setten, Robert de Kruif, Brid Connolly, Norihito Fukugami, Yutaka Kodera, Hiroaki Morimoto, Yo Sakata, Jun Kotani, Shinpei Kondo, Tomohiro Imoto, Haiko Rolff, Albrecht Ullrich, Ad Lammers, Guido Schiffelers, Joep van Dijk

Proceedings Volume 9256, 925602 (2014) https://doi.org/10.1117/12.2072945

KEYWORDS: Reticles, Photomasks, Extreme ultraviolet, Semiconducting wafers, Reflectivity, 3D metrology, Deep ultraviolet, Neodymium, Atomic force microscopy, Scanners

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Proceedings Article | 1 October 2013 Paper

Paper

Experimental approach to EUV imaging enhancement by mask absorber height optimization

Natalia Davydova, Robert de Kruif, Haiko Rolff, Brid Connolly, Eelco van Setten, Ad Lammers, Dorothe Oorschot, Norihito Fukugami, Yutaka Kodera

Proceedings Volume 8886, 88860A (2013) https://doi.org/10.1117/12.2030806

KEYWORDS: Photomasks, Extreme ultraviolet, Reflectivity, Critical dimension metrology, Reticles, Calibration, Phase shifts, Refractive index, Optical proximity correction, Etching

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EUV lithography performance is improved significantly by optimizing and fine-tuning of the EUV mask. The EUV mask is an active element of the scanner optical system influencing main lithographic figure of merits such as image contrast, critical dimension uniformity (CDU), focus and overlay. The mask stack consists of Mo/Si multilayer acting as a bright field and a patterned absorber stack. In this work we will concentrate on investigation of EUV absorber. Absorber topography that is pronounced compared to the imaging wavelength of 13.5 nm, will give rise to various mask 3d effects such as shadowing or dependence of CD on feature orientation, best focus shift of different resolution structures, etc. Light interference in the absorber layer results in swinging behavior of various lithography metrics as function of the absorber height. Optimization of the mask absorber allows mitigating mask 3d effects and improving imaging performance. In particular, reduction of the absorber height mitigates the shadowing effect and relaxes requirements on Optical Proximity Correction (OPC), but can result in smaller Process Window due to lower imaging contrast and larger best focus shifts. In this work we will show results of an experimental approach to absorber height optimization. A special mask with 27 different absorber heights in the range 40-70 nm is manufactured by Toppan Photomasks. EUV reflectivity spectra are measured for the different absorber heights and an experimental swing curve is constructed. For each absorber height various resolution features are present on the mask. Lines of 27 nm and 22 nm are imaged on the wafer using the ASML EUV scanner NXE:3300B with an NA of 0.33. The experimental CD swing curve is constructed as well as HV change as a function of absorber height. The impact of the absorber height on Exposure Latitude (EL) and Dose to Size (D2S) is investigated. EL improves with increasing absorber height in some cases, however there is no clear EL gain for a 70 nm absorber compared to for example 52 nm absorber. D2S does show a clear trend through absorber height. In particular, D2S can be reduced by absorber height reduction: e.g. for 52 nm absorber D2S is 5% or 1 mJ/cm2 smaller compared to 70 nm. The experimental results are used for calibration and verification of rigorous mask 3d simulations. This knowledge is crucial for accurate OPC of production masks and allows for accurate litho simulations of EUV user cases as a basis for lithography roadmaps towards High Volume Manufacturing and High NA EUV.

Proceedings Article | 20 September 2013 Paper

Paper

Reflecting on inspectability and wafer printability of multiple EUV mask absorbers

Kazunori Seki, Karen Badger, Emily Gallagher, Gregory McIntyre, Toshio Konishi, Yutaka Kodera, Satoshi Takahashi, Vincent Redding

Proceedings Volume 8880, 88800S (2013) https://doi.org/10.1117/12.2027054

KEYWORDS: Inspection, Extreme ultraviolet, Lawrencium, Semiconducting wafers, Photomasks, Reflectivity, Wafer inspection, Defect detection, Opacity, Mask making

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Proceedings Article | 28 June 2013 Paper

Paper

Exploring probability of shallow ML defect impact to defect assurance

Kazuaki Matsui, Noriaki Takagi, Satoshi Takahashi, Yutaka Kodera, Yo Sakata, Shinji Akima

Proceedings Volume 8701, 87010Q (2013) https://doi.org/10.1117/12.2031845

KEYWORDS: Extreme ultraviolet, Photomasks, Inspection, Semiconducting wafers, Atomic force microscopy, Extreme ultraviolet lithography, Lithography, Device simulation, Defect detection, EUV optics

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Proceedings Article | 28 June 2013 Paper

Paper

Evaluation of non-actinic EUV mask inspection and defect printability on multiple EUV mask absorbers

Karen Badger, Emily Gallagher, Kazunori Seki, Gregory McIntyre, Toshio Konishi, Yutaka Kodera, Vincent Redding

Proceedings Volume 8701, 870114 (2013) https://doi.org/10.1117/12.2029882

KEYWORDS: Inspection, Photomasks, Semiconducting wafers, Extreme ultraviolet, Opacity, Defect inspection, Polarization, Signal detection, Extreme ultraviolet lithography, Defect detection

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Proceedings Article | 30 June 2012 Paper

Paper

Novel programmed defect mask blanks for ML defect understanding and characterization

Kazuaki Matsui, Takagi Noriaki, Isogawa Takeshi, Yutaka Kodera, Sakata Yo, Akima Shinji

Proceedings Volume 8441, 84411A (2012) https://doi.org/10.1117/12.975824

KEYWORDS: Inspection, Photomasks, Extreme ultraviolet, Scanning electron microscopy, Lithography, Control systems, Atomic force microscopy, Mask making, Defect inspection, Double patterning technology

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Proceedings Article | 30 June 2012 Paper

Paper

Black border with etched multilayer on EUV mask

Norihito Fukugami, Kazuaki Matsui, Genta Watanabe, Takeshi Isogawa, Shinpei Kondo, Yutaka Kodera, Yo Sakata, Shinji Akima, Jun Kotani, Hiroaki Morimoto, Tsuyoshi Tanaka

Proceedings Volume 8441, 84411K (2012) https://doi.org/10.1117/12.965536

KEYWORDS: Extreme ultraviolet, Reflectivity, Photomasks, Semiconducting wafers, Deep ultraviolet, Etching, Manufacturing, Inspection, Extreme ultraviolet lithography, Image processing

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Proceedings Article | 25 September 2010 Paper

Paper

Development and characterization of a thinner binary mask absorber for 22-nm node and beyond

Tom Faure, Karen Badger, Louis Kindt, Yutaka Kodera, Toru Komizo, Shinpei Kondo, Takashi Mizoguchi, Satoru Nemoto, Kazunori Seki, Tasuku Senna, Richard Wistrom, Amy Zweber, Kazuhiro Nishikawa, Yukio Inazuki, Hiroki Yoshikawa

Proceedings Volume 7823, 78230J (2010) https://doi.org/10.1117/12.864130

KEYWORDS: Photomasks, Etching, Binary data, Opacity, Inspection, Image processing, Photoresist processing, Dry etching, Mask making, Thin films

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Proceedings Article | 23 September 2009 Paper

Paper

SMO photomask inspection in the lithographic plane

Emily Gallagher, Karen Badger, Yutaka Kodera, Jaione Tirapu Azpiroz, Ioana Graur, Scott Halle, Kafai Lai, Gregory McIntyre, Mark Wihl, Shaoyun Chen, Ge Cong, Bo Mu, Zhian Guo, Aditya Dayal

Proceedings Volume 7488, 748807 (2009) https://doi.org/10.1117/12.830668

KEYWORDS: Photomasks, Inspection, Source mask optimization, Semiconducting wafers, Lithography, Manufacturing, Binary data, Reticles, Image processing, Image resolution

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Proceedings Article | 17 October 2008 Paper

Paper

Impact of the OMOG substrate on 32 nm mask OPC inspectability, defect sensitivity, and mask design rule restrictions

Karen Badger, Yutaka Kodera, Emily Gallagher, Mark Lawliss

Proceedings Volume 7122, 71220A (2008) https://doi.org/10.1117/12.801951

KEYWORDS: Inspection, Photomasks, Opacity, Optical proximity correction, Attenuators, SRAF, Defect inspection, Defect detection, Reticles, Semiconducting wafers

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Proceedings Article | 17 October 2008 Paper

Paper

Wafer plane inspection evaluated for photomask production

Emily Gallagher, Karen Badger, Mark Lawliss, Yutaka Kodera, Jaione Tirapu Azpiroz, Song Pang, Hongqin Zhang, Eugenia Eugenieva, Chris Clifford, Arosha Goonesekera, Yibin Tian

Proceedings Volume 7122, 71221B (2008) https://doi.org/10.1117/12.801945

KEYWORDS: Photomasks, Inspection, Semiconducting wafers, Finite-difference time-domain method, Wafer inspection, Manufacturing, Printing, Lithography, Reticles, Optical proximity correction

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Proceedings Article | 17 October 2008 Paper

Paper

Damage mechanisms and process optimization for photomasks with sub-resolution assist features

L. Kindt, E. Gallagher, J. Levin, Y. Kodera, Y. Okawa, Y. Sasaki

Proceedings Volume 7122, 71220I (2008) https://doi.org/10.1117/12.801568

KEYWORDS: SRAF, Particles, Cavitation, Photomasks, Manufacturing, Photoresist processing, Nitrogen, Inspection, Quartz, Binary data

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Proceedings Article | 15 May 2007 Paper

Paper

Impact of transmitted and reflected light inspection on mask inspectability, defect sensitivity, and mask design rule restrictions

Yutaka Kodera, Karen Badger, Emily Gallagher, Shinji Akima, Mark Lawliss, Hidehiro Ikeda, Ian Stobert, Yasutaka Kikuchi

Proceedings Volume 6607, 66072E (2007) https://doi.org/10.1117/12.728997

KEYWORDS: Inspection, Photomasks, Opacity, Optical proximity correction, SRAF, Semiconducting wafers, Defect inspection, Defect detection, Image quality, Manufacturing

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Proceedings Article | 6 December 2004 Paper

Paper

Phase defect printability and mask inspection capability of 65-nm technology node Alt-PSM for ArF lithography (Photomask Japan Best Paper)

Shinji Akima, Tooru Komizo, Saburo Kawakita, Yutaka Kodera, Tsuyoshi Narita, Kiichi Ishikawa

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.580003

KEYWORDS: Photomasks, Semiconducting wafers, Inspection, Defect detection, Visibility, Lithography, Scanning electron microscopy, Atomic force microscopy, Phase shift keying, Image enhancement

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Proceedings Article | 28 August 2003 Paper

Paper

Defect printability and inspection capability for tri-tone PSM

Yoshikazu Nagamura, Kazuyuki Maetoko, Kiyoshi Maeshima, Naohisa Tamada, Kunihiro Hosono, Masaya Fujimoto, Yutaka Kodera, Koji Goto, Tsuyoshi Narita, Fuyuhiko Matsuo, Shinji Akima, Mikio Ishijima, Hironobu Iwasaki, Yasutaka Kikuchi

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504207

KEYWORDS: Inspection, Picosecond phenomena, Chromium, Calibration, Semiconducting wafers, Defect inspection, Photomasks, Defect detection, Critical dimension metrology, Phase shifts

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SPIE Journal Paper | 1 August 2000

Shadow moire profilometry using the phase-shifting method

Lianhua Jin, Yutaka Kodera, Toru Yoshizawa, Yukitoshi Otani

OE, Vol. 39, Issue 08, (August 2000) https://doi.org/10.1117/12.10.1117/1.1305468

KEYWORDS: Phase shifts, Image processing, CCD cameras, Light sources, Moire patterns, Phase shifting, Optical engineering, Computing systems, 3D image processing, Aluminum

Proceedings Article | 7 May 1999 Paper

Paper

Shadow moire profilometry using a phase-shifting method

Lianhua Jin, Yutaka Kodera, Toru Yoshizawa, Yukitoshi Otani

Proceedings Volume 3740, (1999) https://doi.org/10.1117/12.347777

KEYWORDS: Moire patterns, Phase shifts, CCD cameras, Light sources, Silicon, Lithium, Aluminum, Phase shifting, Focus stacking software, Osmium

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Proceedings Article | 30 June 1998 Paper

Paper

Flatness measurement by a UV moire technique

Hisatoshi Fujiwara, Yutaka Kodera, Yukitoshi Otani, Toru Yoshizawa

Proceedings Volume 3478, (1998) https://doi.org/10.1117/12.312970

KEYWORDS: Glasses, Moire patterns, Phase shifting, LCDs, Ultraviolet radiation, Semiconducting wafers, Time metrology, Phase measurement, Ceramics, Optical components

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Showing 5 of 28 publications

Proceedings Volume Editor (1)

SPIE Conference Volume | 2 August 2018

Photomask Japan 2018: XXV Symposium on Photomask and Next-Generation Lithography Mask Technology

Conference Committee Involvement (1)

Photomask Japan 2018

18 April 2018 | Yokohama, Japan

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