born 30.09.1961 Berlin,
1982-1987 Physics studies at TU Dresden, graduated with a work on x-ray fluorescence analysis,
1987-1991 working on x-ray detectors at the Centre for scientific instrumentation of the Academy of Sciences,
since 1991 with the X-ray radiometry laboratory of PTB at BESSY
1997 PhD at TU Berlin, internal quantum yield of silicon in the soft X-ray spectral range
working on EUV and soft x-ray detector calibration and optical components characterization,
development of measurement methods for the characterization of components for EUV Lithography
and x-ray scattering methods for the characterization of structured surfaces.
Head of the working group for EUV radiometry.
1982-1987 Physics studies at TU Dresden, graduated with a work on x-ray fluorescence analysis,
1987-1991 working on x-ray detectors at the Centre for scientific instrumentation of the Academy of Sciences,
since 1991 with the X-ray radiometry laboratory of PTB at BESSY
1997 PhD at TU Berlin, internal quantum yield of silicon in the soft X-ray spectral range
working on EUV and soft x-ray detector calibration and optical components characterization,
development of measurement methods for the characterization of components for EUV Lithography
and x-ray scattering methods for the characterization of structured surfaces.
Head of the working group for EUV radiometry.
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Using rigorous lithographic simulations, we screen potential single element absorber materials for their optical properties and their optimal thickness for minimum best focus variation through pitch at wafer level. In addition, the M3D mitigation by absorber material is evaluated by process window comparison of foundry N5 specific logic clips.
In order to validate the rigorous simulation predictions and to test the processing feasibility of the alternative absorber materials, we have selected the candidate single elements Nickel and Cobalt for an experimental evaluation on wafer substrates. In this work, we present the film characterization as well as first patterning tests of these single element candidate absorber materials.
The intensity distribution of diffusely scattered EUV radiation provides information on vertical and lateral correlations of the surface and interface roughness through the appearance of resonant diffuse scattering (RDS) sheets. The study of off-specular scattering thus serves as a natural tool for the investigation of the roughness of the interfaces. However, upon near-normal incidence impinging EUV radiation, dynamical scattering contributions from thickness oscillations (Kiessig fringes) lead to Bragg lines which intersect the RDS sheets. This causes strong resonant enhancement in the scatter cross section which we called “Kiessig-like peak" in analogy to the well known phenomenon of Bragg-like peaks appearing in hard X-ray grazing incidence measurement geometries. Thus for power spectral density studies of multilayer interface roughness, resonant dynamical scattering cannot be neglected. Theoretical simulations based on the distorted-wave Born approximation enable to separate dynamic features of the multilayer from roughness induced scattering. This allows to consistently determine an interface power spectral density (PSD). We have analyzed magnetron sputtered high-reflectance Mo/Si multilayer mirrors with different nominal molybdenum layer thicknesses from 1.7 nm to 3.05 nm crossing the Mo crystallization threshold.
Our off-specular scattering measurements at multilayer samples were conducted at the PTB-EUV radiometry beamline at the Metrology Light Source (MLS) in Berlin. The samples were produced by magnetron sputtering and pre-characterized by Kα X-ray reflectivity at Fraunhofer IWS, Dresden.
We present first results on the polarization properties of EUV multilayer mirrors close to the Brewster angle where polarization selectivity up to s104 is predicted from model calculations. We also present polarization resolved measurements of the EUV diffraction of absorber line patterns at EUV photomasks.
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